Infineon Technologies AG Single FETs, MOSFETs BSC100N03MSGATMA1

Description
N-Channel 30V 12A (Ta), 44A (Tc) 2.5W (Ta), 30W (Tc) Surface Mount PG-TDSON-8-5
Request a Quote Datasheet
Description
N-Channel 30V 12A (Ta), 44A (Tc) 2.5W (Ta), 30W (Tc) Surface Mount PG-TDSON-8-5
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - BSC100N03MSGATMA1TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
BSC100N03MSGATMA1TR-ND
Single FETs, MOSFETs BSC100N03MSGATMA1TR-ND
N-Channel 30V 12A (Ta), 44A (Tc) 2.5W (Ta), 30W (Tc) Surface Mount PG-TDSON-8-5

N-Channel 30V 12A (Ta), 44A (Tc) 2.5W (Ta), 30W (Tc) Surface Mount PG-TDSON-8-5

Buy Now Datasheet
Single FETs, MOSFETs - BSC100N03MSGATMA1CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
BSC100N03MSGATMA1CT-ND
Single FETs, MOSFETs BSC100N03MSGATMA1CT-ND
N-Channel 30V 12A (Ta), 44A (Tc) 2.5W (Ta), 30W (Tc) Surface Mount PG-TDSON-8-5

N-Channel 30V 12A (Ta), 44A (Tc) 2.5W (Ta), 30W (Tc) Surface Mount PG-TDSON-8-5

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC100N03MSGATMA1 - 097513-BSC100N03MSGATMA1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC100N03MSGATMA1
097513-BSC100N03MSGATMA1
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC100N03MSGATMA1 097513-BSC100N03MSGATMA1
Manufacturer: Infineon Technologies Win Source Part Number: 097513-BSC100N03MSGA TMA1 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 30W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TDSON-8 Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 12A (Ta), 44A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 23nC @ 10V Max Input Capacitance: 1700pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 10 mOhm @ 30A, 10V Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Sufficient Quantity per package: 5k pcs

Manufacturer: Infineon Technologies
Win Source Part Number: 097513-BSC100N03MSGATMA1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TDSON-8
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 12A (Ta), 44A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 23nC @ 10V
Max Input Capacitance: 1700pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 10 mOhm @ 30A, 10V
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Sufficient
Quantity per package: 5k pcs

Buy Now Datasheet
Singapore, Singapore
30V 12A 44A MOSFET Transistor
278-BSC100N03MSGATMA1
30V 12A 44A MOSFET Transistor 278-BSC100N03MSGATMA1
MOSFET N-CH 30V 12A/44A TDSON Product overview: BSC100N03MSGATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 12A, 44A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 12A, 44A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSC100N03MSGATMA 1 can be used for catalog matching and distributor lookup.

MOSFET N-CH 30V 12A/44A TDSON Product overview: BSC100N03MSGATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 12A, 44A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 12A, 44A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSC100N03MSGATMA1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
MOSFET N-Ch 30V 44A TDSON-8 OptiMOS 3M

MOSFET N-Ch 30V 44A TDSON-8 OptiMOS 3M

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - BSC100N03MSGATMA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
BSC100N03MSGATMA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs BSC100N03MSGATMA1
MOSFET N-CH 30V 12A/44A TDSON

MOSFET N-CH 30V 12A/44A TDSON

Supplier's Site
Mosfet Transistor, N Channel, 44 A, 30 V, 0.0083 Ohm, 10 V, 2 V Rohs Compliant Infineon - 50Y1812 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, N Channel, 44 A, 30 V, 0.0083 Ohm, 10 V, 2 V Rohs Compliant Infineon
50Y1812
Mosfet Transistor, N Channel, 44 A, 30 V, 0.0083 Ohm, 10 V, 2 V Rohs Compliant Infineon 50Y1812
MOSFET Transistor, N Channel, 44 A, 30 V, 0.0083 ohm, 10 V, 2 V RoHS Compliant: Yes

MOSFET Transistor, N Channel, 44 A, 30 V, 0.0083 ohm, 10 V, 2 V RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number BSC100N03MSGATMA1TR-ND 097513-BSC100N03MSGATMA1 278-BSC100N03MSGATMA1 BSC100N03MSGATMA1 BSC100N03MSGATMA1 50Y1812
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC100N03MSGATMA1 30V 12A 44A MOSFET Transistor MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet Transistor, N Channel, 44 A, 30 V, 0.0083 Ohm, 10 V, 2 V Rohs Compliant Infineon
Polarity N-Channel N-Channel; N-Channel N-Channel N-Channel
Package Type 8-PowerTDFN SOT3; PG-TDSON-8 Tape & Reel (TR) Surface Mount TO-3
V(BR)DSS 30 volts 30 volts
PD 2500 to 30000 milliwatts 30 milliwatts
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