MOSFET N-CH 30V 12A/44A TDSON Product overview: BSC100N03MSGATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 12A, 44A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 12A, 44A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSC100N03MSGATMA
N-Channel 30V 12A (Ta), 44A (Tc) 2.5W (Ta), 30W (Tc) Surface Mount PG-TDSON-8-5
N-Channel 30V 12A (Ta), 44A (Tc) 2.5W (Ta), 30W (Tc) Surface Mount PG-TDSON-8-5
Manufacturer: Infineon Technologies
Win Source Part Number: 097513-BSC100N03MSGA
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TDSON-8
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 12A (Ta), 44A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 23nC @ 10V
Max Input Capacitance: 1700pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 10 mOhm @ 30A, 10V
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Sufficient
Quantity per package: 5k pcs
MOSFET N-CH 30V 12A/44A TDSON
MOSFET N-Ch 30V 44A TDSON-8 OptiMOS 3M
MOSFET Transistor, N Channel, 44 A, 30 V, 0.0083 ohm, 10 V, 2 V RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-BSC100N03MSGATMA1 | BSC100N03MSGATMA1TR-ND | 097513-BSC100N03MSGATMA1 | BSC100N03MSGATMA1 | BSC100N03MSGATMA1 | 50Y1812 |
| Product Name | 30V 12A 44A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC100N03MSGATMA1 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet Transistor, N Channel, 44 A, 30 V, 0.0083 Ohm, 10 V, 2 V Rohs Compliant Infineon |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||
| MOSFET Operating Mode | Enhancement | |||||
| V(BR)DSS | 30 volts | 30 volts | ||||
| Transconductance | 0.0270 kS |
