Infineon Technologies AG MOSFET BSC090N03MSGXT

The BSC090N03MS G is an N-channel MOSFET in a PG-TDSON-8 package, optimized for 5V driver applications in notebook, VGA, and POL systems. It has a drain-source voltage rating of 30 V and a continuous drain current of 48 A at 25 °C with V_GS = 10 V. The device features a typical on-resistance of 9.0 mΩ at V_GS = 4.5 V and 7.5 mΩ at V_GS = 10 V, with a gate charge total of up to 24 nC for V_GS = 0 to 10 V. It is 100% avalanche tested with a single-pulse avalanche energy of 10 mJ and has a thermal resistance from junction to case of 3.9 K/W on the bottom side. The MOSFET is RoHS compliant, halogen-free per IEC 61249-2-21, and qualified according to JEDEC standards for target applications.