Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC0909NS BSC0909NS

Manufacturer: Infineon Technologies
Win Source Part Number: 079691-BSC0909NS
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 27W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TDSON-8
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 34V
Continuous Drain Current at 25°C: 12A (Ta), 44A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 15nC @ 10V
Max Input Capacitance: 1110pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 9.2 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Balance

MOSFETs N-Ch 30V 44A TDSON-8 OptiMOS Product overview: BSC0909NS from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 44A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 44A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-BSC0909NS can be used for catalog matching and distributor lookup.