MOSFET N-CH 30V 28A/100A TDSON Product overview: BSC0901NSIATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 28A, 100A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 28A, 100A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSC0901NSIATMA1 can be used for catalog matching and distributor lookup.
Manufacturer: Infineon Technologies
Win Source Part Number: 864658-BSC0901NSIATM
Series: OptiMOS™
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 30 V 28A (Ta), 100A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount PG-TDSON-8-6
Package: 8-PowerTDFN
Package: Reel - TR
Mounting: Surface Mount
Family Name: BSC0901
Categories: Discrete Semiconductor Products
Case / Package: PG-TDSON-8-6
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 82 pct.
Supply and Demand Status: Limited
Quantity per package: 5000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 46 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: BSC0901NSI, BSC0901NSICT, BSC0901NSIATMA1DKR, BSC0901NSIDKR, BSC0901NSIATMA1TR, BSC0901NSITR-ND, BSC0901NSIATMA1CT, SP000819818, BSC0901NSIDKR-ND, BSC0901NSICT-ND, BSC0901NSI-ND
N-Channel 30V 28A (Ta), 100A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount PG-TDSON-8-6
N-Channel 30V 28A (Ta), 100A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount PG-TDSON-8-6
N-Channel 30V 28A (Ta), 100A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount PG-TDSON-8-6
MOSFET, N-CH, 30V, 100A, TDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0017ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; Power RoHS Compliant: Yes
MOSFET N-CH 30V 28A 8TDSON
30V 2mΩ@30A,10V 2.2V@250uA N Channel TDSON-8 MOSFETs ROHS
MOSFET N-CH 30V 28A/100A TDSON
MOSFET N-CH 30V 28A/100A TDSON
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Newark, An Avnet Company | Utmel Electronic Limited | LCSC Electronics Technology (HK) Limited | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-BSC0901NSIATMA1 | 864658-BSC0901NSIATMA1 | BSC0901NSIATMA1TR-ND | 13AC8336 | 376-BSC0901NSIATMA1 | BSC0901NSIATMA1 | BSC0901NSIATMA1 | BSC0901NSIATMA1 |
| Product Name | 30V 28A 100A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC0901NSIATMA1 | Single FETs, MOSFETs | Mosfet, N-Ch, 30V, 100A, Tdson; Transistor Polarity Infineon | MOSFET N-CH 30V 28A 8TDSON | Triode/MOS Tube/Transistor >> MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs |
| MOSFET Operating Mode | Enhancement | Enhancement; ENHANCEMENT MODE | ||||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | |||||
| PD | 2500 milliwatts | 2500 milliwatts | 2500 milliwatts | 2500 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||
| Package Type | Tape & Reel (TR) | SOT3; PG-TDSON-8-6 | 8-PowerTDFN | TO-3 | 8-PowerTDFN | 8-PowerTDFN |
