Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC0901NSIATMA1 BSC0901NSIATMA1

Description
Manufacturer: Infineon Technologies Win Source Part Number: 864658-BSC0901NSIATM A1 Series: OptiMOS™ Operating Temperature Range: -55°C ~ 150°C (TJ) Features: N-Channel 30 V 28A (Ta), 100A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount PG-TDSON-8-6 Package: 8-PowerTDFN Package: Reel - TR Mounting: Surface Mount Family Name: BSC0901 Categories: Discrete Semiconductor Products Case / Package: PG-TDSON-8-6 ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 82 pct. Supply and Demand Status: Limited Quantity per package: 5000 MSL Level: 1 (Unlimited) Estimated Pruduction Lead Time: 46 Weeks REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Other Part Number: BSC0901NSI, BSC0901NSICT, BSC0901NSIATMA1DKR, BSC0901NSIDKR, BSC0901NSIATMA1TR, BSC0901NSITR-ND, BSC0901NSIATMA1CT, SP000819818, BSC0901NSIDKR-ND, BSC0901NSICT-ND, BSC0901NSI-ND
Request a Quote Datasheet
Description
Manufacturer: Infineon Technologies Win Source Part Number: 864658-BSC0901NSIATM A1 Series: OptiMOS™ Operating Temperature Range: -55°C ~ 150°C (TJ) Features: N-Channel 30 V 28A (Ta), 100A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount PG-TDSON-8-6 Package: 8-PowerTDFN Package: Reel - TR Mounting: Surface Mount Family Name: BSC0901 Categories: Discrete Semiconductor Products Case / Package: PG-TDSON-8-6 ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 82 pct. Supply and Demand Status: Limited Quantity per package: 5000 MSL Level: 1 (Unlimited) Estimated Pruduction Lead Time: 46 Weeks REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Other Part Number: BSC0901NSI, BSC0901NSICT, BSC0901NSIATMA1DKR, BSC0901NSIDKR, BSC0901NSIATMA1TR, BSC0901NSITR-ND, BSC0901NSIATMA1CT, SP000819818, BSC0901NSIDKR-ND, BSC0901NSICT-ND, BSC0901NSI-ND
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC0901NSIATMA1 - 864658-BSC0901NSIATMA1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC0901NSIATMA1
864658-BSC0901NSIATMA1
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC0901NSIATMA1 864658-BSC0901NSIATMA1
Manufacturer: Infineon Technologies Win Source Part Number: 864658-BSC0901NSIATM A1 Series: OptiMOS™ Operating Temperature Range: -55°C ~ 150°C (TJ) Features: N-Channel 30 V 28A (Ta), 100A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount PG-TDSON-8-6 Package: 8-PowerTDFN Package: Reel - TR Mounting: Surface Mount Family Name: BSC0901 Categories: Discrete Semiconductor Products Case / Package: PG-TDSON-8-6 ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 82 pct. Supply and Demand Status: Limited Quantity per package: 5000 MSL Level: 1 (Unlimited) Estimated Pruduction Lead Time: 46 Weeks REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Other Part Number: BSC0901NSI, BSC0901NSICT, BSC0901NSIATMA1DKR, BSC0901NSIDKR, BSC0901NSIATMA1TR, BSC0901NSITR-ND, BSC0901NSIATMA1CT, SP000819818, BSC0901NSIDKR-ND, BSC0901NSICT-ND, BSC0901NSI-ND

Manufacturer: Infineon Technologies
Win Source Part Number: 864658-BSC0901NSIATMA1
Series: OptiMOS™
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 30 V 28A (Ta), 100A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount PG-TDSON-8-6
Package: 8-PowerTDFN
Package: Reel - TR
Mounting: Surface Mount
Family Name: BSC0901
Categories: Discrete Semiconductor Products
Case / Package: PG-TDSON-8-6
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 82 pct.
Supply and Demand Status: Limited
Quantity per package: 5000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 46 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: BSC0901NSI, BSC0901NSICT, BSC0901NSIATMA1DKR, BSC0901NSIDKR, BSC0901NSIATMA1TR, BSC0901NSITR-ND, BSC0901NSIATMA1CT, SP000819818, BSC0901NSIDKR-ND, BSC0901NSICT-ND, BSC0901NSI-ND

Buy Now Datasheet
Single FETs, MOSFETs - BSC0901NSIATMA1TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
BSC0901NSIATMA1TR-ND
Single FETs, MOSFETs BSC0901NSIATMA1TR-ND
N-Channel 30V 28A (Ta), 100A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount PG-TDSON-8-6

N-Channel 30V 28A (Ta), 100A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount PG-TDSON-8-6

Buy Now Datasheet
Single FETs, MOSFETs - BSC0901NSIATMA1DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
BSC0901NSIATMA1DKR-ND
Single FETs, MOSFETs BSC0901NSIATMA1DKR-ND
N-Channel 30V 28A (Ta), 100A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount PG-TDSON-8-6

N-Channel 30V 28A (Ta), 100A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount PG-TDSON-8-6

Buy Now Datasheet
Single FETs, MOSFETs - BSC0901NSIATMA1CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
BSC0901NSIATMA1CT-ND
Single FETs, MOSFETs BSC0901NSIATMA1CT-ND
N-Channel 30V 28A (Ta), 100A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount PG-TDSON-8-6

N-Channel 30V 28A (Ta), 100A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount PG-TDSON-8-6

Buy Now Datasheet
Singapore, Singapore
30V 28A 100A MOSFET Transistor
278-BSC0901NSIATMA1
30V 28A 100A MOSFET Transistor 278-BSC0901NSIATMA1
MOSFET N-CH 30V 28A/100A TDSON Product overview: BSC0901NSIATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 28A, 100A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 28A, 100A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSC0901NSIATMA1 can be used for catalog matching and distributor lookup.

MOSFET N-CH 30V 28A/100A TDSON Product overview: BSC0901NSIATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 28A, 100A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 28A, 100A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSC0901NSIATMA1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
BSC0901NSIATMA1
Triode/MOS Tube/Transistor >> MOSFETs BSC0901NSIATMA1
30V 2mΩ@30A,10V 2.2V@250uA N Channel TDSON-8 MOSFETs ROHS

30V 2mΩ@30A,10V 2.2V@250uA N Channel TDSON-8 MOSFETs ROHS

Supplier's Site
Mosfet, N-Ch, 30V, 100A, Tdson; Transistor Polarity Infineon - 13AC8336 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 30V, 100A, Tdson; Transistor Polarity Infineon
13AC8336
Mosfet, N-Ch, 30V, 100A, Tdson; Transistor Polarity Infineon 13AC8336
MOSFET, N-CH, 30V, 100A, TDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0017ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; Power RoHS Compliant: Yes

MOSFET, N-CH, 30V, 100A, TDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0017ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; Power RoHS Compliant: Yes

Supplier's Site
Single FETs, MOSFETs - BSC0901NSIATMA1 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
BSC0901NSIATMA1
Single FETs, MOSFETs BSC0901NSIATMA1
MOSFET N-CH 30V 28A/100A TDSON

MOSFET N-CH 30V 28A/100A TDSON

Supplier's Site Datasheet
MOSFET N-CH 30V 28A 8TDSON - 376-BSC0901NSIATMA1 - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 30V 28A 8TDSON
376-BSC0901NSIATMA1
MOSFET N-CH 30V 28A 8TDSON 376-BSC0901NSIATMA1
MOSFET N-CH 30V 28A 8TDSON

MOSFET N-CH 30V 28A 8TDSON

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - BSC0901NSIATMA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
BSC0901NSIATMA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs BSC0901NSIATMA1
MOSFET N-CH 30V 28A/100A TDSON

MOSFET N-CH 30V 28A/100A TDSON

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. LCSC Electronics Technology (HK) Limited Newark, An Avnet Company ODG (Origin Data Global) Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 864658-BSC0901NSIATMA1 BSC0901NSIATMA1TR-ND 278-BSC0901NSIATMA1 BSC0901NSIATMA1 13AC8336 BSC0901NSIATMA1 376-BSC0901NSIATMA1 BSC0901NSIATMA1
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC0901NSIATMA1 Single FETs, MOSFETs 30V 28A 100A MOSFET Transistor Triode/MOS Tube/Transistor >> MOSFETs Mosfet, N-Ch, 30V, 100A, Tdson; Transistor Polarity Infineon Single FETs, MOSFETs MOSFET N-CH 30V 28A 8TDSON Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel N-Channel; N-Channel
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; PG-TDSON-8-6 8-PowerTDFN Tape & Reel (TR) TO-3 8-PowerTDFN 8-PowerTDFN
MOSFET Operating Mode Enhancement Enhancement; ENHANCEMENT MODE
V(BR)DSS 30 volts 30 volts 30 volts
Unlock Full Specs
to access all available technical data

Similar Products

400 Watt, 50 Volt, 2.7 - 2.9 GHz, GaN RF Power Transistor - QPD1881L - Qorvo
Specs
Transistor Technology / Material GaN
Package Type NI-780 (Eared)
Power Gain 21.2 dB
View Details
Single FETs, MOSFETs - 64-0007-ND - DigiKey
Infineon Technologies AG
Specs
Polarity N-Channel
Package Type TO-220; TO-220-3
View Details
2 suppliers
GaAs Fet Switches - KCB816 - Micross Components, Inc.
Micross Components, Inc.
Specs
Operating Frequency 4000 MHz
View Details