Infineon Technologies AG Discrete Semiconductor Products BSC080N03LS G

Description
Manufacturer: Infineon Technologies Win Source Part Number: 079690-BSC080N03LS G Category: Discrete Semiconductor Products Family: FETs - Single Series: OptiMOS Packaging: Reel Mounting Style: SMD/SMT Operating Temperature Range: -55°C ~ 150°C (TJ) Package: 8-PowerTDFN Manufacturer Device Package: PG-TDSON-8 Standard Package: 1 Catalog: N-Channel Logic Level Gate FETs FET Type: MOSFET N-Channel Metal Oxide FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 14A (Ta) 53A (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) @ Vgs: 21nC @ 10V Input Capacitance (Ciss) @ Vds: 1700pF @ 15V Power - Max: 35W Rds On (Max) @ Id Vgs: 8 mOhm @ 30A 10V Family Name: BSC080N03LS Alternative Parts (Cross-Reference): BSC080N03LSGXT; FDMS7680; Si7446BDP-T1-E3; SiR462DP-T1-E3; Introduction Date: July 11, 2007 ECCN: EAR99 Country of Origin: China, Malaysia Estimated EOL Date: 2029 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 079690-BSC080N03LS G Category: Discrete Semiconductor Products Family: FETs - Single Series: OptiMOS Packaging: Reel Mounting Style: SMD/SMT Operating Temperature Range: -55°C ~ 150°C (TJ) Package: 8-PowerTDFN Manufacturer Device Package: PG-TDSON-8 Standard Package: 1 Catalog: N-Channel Logic Level Gate FETs FET Type: MOSFET N-Channel Metal Oxide FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 14A (Ta) 53A (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) @ Vgs: 21nC @ 10V Input Capacitance (Ciss) @ Vds: 1700pF @ 15V Power - Max: 35W Rds On (Max) @ Id Vgs: 8 mOhm @ 30A 10V Family Name: BSC080N03LS Alternative Parts (Cross-Reference): BSC080N03LSGXT; FDMS7680; Si7446BDP-T1-E3; SiR462DP-T1-E3; Introduction Date: July 11, 2007 ECCN: EAR99 Country of Origin: China, Malaysia Estimated EOL Date: 2029 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Balance
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Discrete Semiconductor Products - 079690-BSC080N03LS G - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products
079690-BSC080N03LS G
Discrete Semiconductor Products 079690-BSC080N03LS G
Manufacturer: Infineon Technologies Win Source Part Number: 079690-BSC080N03LS G Category: Discrete Semiconductor Products Family: FETs - Single Series: OptiMOS Packaging: Reel Mounting Style: SMD/SMT Operating Temperature Range: -55°C ~ 150°C (TJ) Package: 8-PowerTDFN Manufacturer Device Package: PG-TDSON-8 Standard Package: 1 Catalog: N-Channel Logic Level Gate FETs FET Type: MOSFET N-Channel Metal Oxide FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 14A (Ta) 53A (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) @ Vgs: 21nC @ 10V Input Capacitance (Ciss) @ Vds: 1700pF @ 15V Power - Max: 35W Rds On (Max) @ Id Vgs: 8 mOhm @ 30A 10V Family Name: BSC080N03LS Alternative Parts (Cross-Reference): BSC080N03LSGXT; FDMS7680; Si7446BDP-T1-E3; SiR462DP-T1-E3; Introduction Date: July 11, 2007 ECCN: EAR99 Country of Origin: China, Malaysia Estimated EOL Date: 2029 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 079690-BSC080N03LS G
Category: Discrete Semiconductor Products
Family: FETs - Single
Series: OptiMOS
Packaging: Reel
Mounting Style: SMD/SMT
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: 8-PowerTDFN
Manufacturer Device Package: PG-TDSON-8
Standard Package: 1
Catalog: N-Channel Logic Level Gate FETs
FET Type: MOSFET N-Channel Metal Oxide
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta) 53A (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) @ Vgs: 21nC @ 10V
Input Capacitance (Ciss) @ Vds: 1700pF @ 15V
Power - Max: 35W
Rds On (Max) @ Id Vgs: 8 mOhm @ 30A 10V
Family Name: BSC080N03LS
Alternative Parts (Cross-Reference): BSC080N03LSGXT; FDMS7680; Si7446BDP-T1-E3; SiR462DP-T1-E3;
Introduction Date: July 11, 2007
ECCN: EAR99
Country of Origin: China, Malaysia
Estimated EOL Date: 2029
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Balance

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Sheung Wan, Hong Kong
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Technical Specifications

  Win Source Electronics VAST STOCK CO., LIMITED ODG (Origin Data Global)
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors
Product Number 079690-BSC080N03LS G BSC080N03LS G BSC080N03LS G
Product Name Discrete Semiconductor Products MOSFET Transistors
Polarity N-Channel
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