Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC079N03SG BSC079N03SG

Description
Manufacturer: Infineon Technologies Win Source Part Number: 005122-BSC079N03SG Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.8W (Ta), 60W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TDSON-8 Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 14.6A (Ta), 40A (Tc) Gate-Source Threshold Voltage: 2V @ 30μA Max Gate Charge: 17nC @ 5V Max Input Capacitance: 2230pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 7.9 mOhm @ 40A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 005122-BSC079N03SG Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.8W (Ta), 60W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TDSON-8 Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 14.6A (Ta), 40A (Tc) Gate-Source Threshold Voltage: 2V @ 30μA Max Gate Charge: 17nC @ 5V Max Input Capacitance: 2230pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 7.9 mOhm @ 40A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC079N03SG - 005122-BSC079N03SG - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC079N03SG
005122-BSC079N03SG
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC079N03SG 005122-BSC079N03SG
Manufacturer: Infineon Technologies Win Source Part Number: 005122-BSC079N03SG Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.8W (Ta), 60W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TDSON-8 Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 14.6A (Ta), 40A (Tc) Gate-Source Threshold Voltage: 2V @ 30μA Max Gate Charge: 17nC @ 5V Max Input Capacitance: 2230pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 7.9 mOhm @ 40A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Sufficient

Manufacturer: Infineon Technologies
Win Source Part Number: 005122-BSC079N03SG
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.8W (Ta), 60W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TDSON-8
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 14.6A (Ta), 40A (Tc)
Gate-Source Threshold Voltage: 2V @ 30μA
Max Gate Charge: 17nC @ 5V
Max Input Capacitance: 2230pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 7.9 mOhm @ 40A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - BSC079N03SGINTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
BSC079N03SGINTR-ND
Single FETs, MOSFETs BSC079N03SGINTR-ND
N-Channel 30V 14.6A (Ta), 40A (Tc) 2.8W (Ta), 60W (Tc) Surface Mount PG-TDSON-8-1

N-Channel 30V 14.6A (Ta), 40A (Tc) 2.8W (Ta), 60W (Tc) Surface Mount PG-TDSON-8-1

Buy Now Datasheet
Singapore
30V 14.6A 40A MOSFET Transistor
278-BSC079N03SG
30V 14.6A 40A MOSFET Transistor 278-BSC079N03SG
MOSFET N-CH 30V 14.6A/40A TDSON Product overview: BSC079N03SG from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 14.6A, 40A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 14.6A, 40A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSC079N03SG can be used for catalog matching and distributor lookup.

MOSFET N-CH 30V 14.6A/40A TDSON Product overview: BSC079N03SG from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 14.6A, 40A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 14.6A, 40A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSC079N03SG can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
MOSFET N-CH 30V 40A TDSON-8 - 376-BSC079N03SG - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 30V 40A TDSON-8
376-BSC079N03SG
MOSFET N-CH 30V 40A TDSON-8 376-BSC079N03SG
MOSFET N-CH 30V 40A TDSON-8

MOSFET N-CH 30V 40A TDSON-8

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - BSC079N03SG - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
BSC079N03SG
Discrete Semiconductor Products - Transistors - FETs, MOSFETs BSC079N03SG
MOSFET N-CH 30V 14.6A/40A TDSON

MOSFET N-CH 30V 14.6A/40A TDSON

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 005122-BSC079N03SG BSC079N03SGINTR-ND 278-BSC079N03SG 376-BSC079N03SG BSC079N03SG
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC079N03SG Single FETs, MOSFETs 30V 14.6A 40A MOSFET Transistor MOSFET N-CH 30V 40A TDSON-8 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 30 volts 30 volts
PD 2800 to 60000 milliwatts 2800 milliwatts 2800 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; PG-TDSON-8 8-PowerTDFN Tape & Reel (TR) 8-PowerTDFN
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