Infineon Technologies AG RF - Antenna cross switches - BGSX44MU18 BGSX44MU18

4P4T MIPI 0.4 – 7.125 GHz antenna cross switch The BGSX44MU18 RF CMOS switch is specifically designed for LTE and 5G FR1 four-antenna applications. This 4P4T cross-switch offers low insertion loss and low harmonic generation. The switch is controlled via a MIPI RFFE control interface. The on-chip controller allows power-supply voltages from 1.65 to1.95 V. The switch features direct-connect-to-ba ttery functionality and DC-free RF ports. Unlike GaAs technology, external DC blocking capacitors at the RF ports are only required if DC voltage is applied externally. The device has a very small size of only 2.0 mm x 2.4 mm and a thickness of 0.63 mm. Summary of Features High linearity up to 37 dBm peak power Fast switching time (max 2 µs) for 5G SRS applications Low insertion loss and high port to port isolation up to 7.125 GHz Low power consumption allows to use MIPI RFFE supply by combining VDD and VIO pins on a voltage range of only 1.65 – 1.95 V MIPI RFFE 2.1 control interface Software and hardware programmable USID Ultra low profile lead-less plastic package (MSL-3, 260 C per IPC/JEDEC J-STD-20) RoHS and WEEE compliant package Potential Applications 4P4T antenna routing/swapping for cellular mobile devices 4P4T antenna routing/swapping for 5G SRS GSM, WCDMA, LTE and 5G FR1 frequency band applications 4x4 MIMO applications SAR reduction Applications General purpose motor drive - variating frequency and voltage Semiconductor solutions for home entertainment applications Designers who used this product also designed with BGA824N6 | GNSS LNAs BGA855N6 | GNSS LNAs BGS14M8U9 | RF Switches BGA824N6 | GNSS LNAs BGA855N6 | GNSS LNAs BGS14M8U9 | RF Switches BGA824N6 | GNSS LNAs BGA855N6 | GNSS LNAs BGS14M8U9 | RF Switches