Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - BF 2030R E6814 BF 2030R E6814

Description
Manufacturer: Infineon Technologies Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1018674-BF 2030R E6814 Packaging: Tape & Reel Voltage Rating: 8 V Current Rating: 40 mA Length: 2.9 mm Mounting: SMD (SMT) Drain to Source Voltage (Vdss): 8 V Frequency: 800 MHz Input Capacitance: 2.8 pF Height: 1 mm Gain: 23 dB Noise Figure: 1.5 dB Number of Pins: 4 Width: 1.3 mm Categories: Transistors - FETs, MOSFETs - RF Case / Package: SOT-143 Alternative Parts (Cross-Reference): BF 2030R E6814BF2030R E6814; BF2030RE6814; Popularity: Low Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C Lead Free: Yes Mount: Surface Mount RoHS: Compliant Min Operating Temperature: -55 °C Voltage Rating (DC): 8 V Max Power Dissipation: 200 mW Test Current: 10 mA Continuous Drain Current (ID): 40 mA Gate to Source Voltage (Vgs): 6 V Test Voltage: 5 V
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Description
Manufacturer: Infineon Technologies Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1018674-BF 2030R E6814 Packaging: Tape & Reel Voltage Rating: 8 V Current Rating: 40 mA Length: 2.9 mm Mounting: SMD (SMT) Drain to Source Voltage (Vdss): 8 V Frequency: 800 MHz Input Capacitance: 2.8 pF Height: 1 mm Gain: 23 dB Noise Figure: 1.5 dB Number of Pins: 4 Width: 1.3 mm Categories: Transistors - FETs, MOSFETs - RF Case / Package: SOT-143 Alternative Parts (Cross-Reference): BF 2030R E6814BF2030R E6814; BF2030RE6814; Popularity: Low Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C Lead Free: Yes Mount: Surface Mount RoHS: Compliant Min Operating Temperature: -55 °C Voltage Rating (DC): 8 V Max Power Dissipation: 200 mW Test Current: 10 mA Continuous Drain Current (ID): 40 mA Gate to Source Voltage (Vgs): 6 V Test Voltage: 5 V
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - BF 2030R E6814 - 1018674-BF 2030R E6814 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BF 2030R E6814
1018674-BF 2030R E6814
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BF 2030R E6814 1018674-BF 2030R E6814
Manufacturer: Infineon Technologies Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1018674-BF 2030R E6814 Packaging: Tape & Reel Voltage Rating: 8 V Current Rating: 40 mA Length: 2.9 mm Mounting: SMD (SMT) Drain to Source Voltage (Vdss): 8 V Frequency: 800 MHz Input Capacitance: 2.8 pF Height: 1 mm Gain: 23 dB Noise Figure: 1.5 dB Number of Pins: 4 Width: 1.3 mm Categories: Transistors - FETs, MOSFETs - RF Case / Package: SOT-143 Alternative Parts (Cross-Reference): BF 2030R E6814BF2030R E6814; BF2030RE6814; Popularity: Low Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C Lead Free: Yes Mount: Surface Mount RoHS: Compliant Min Operating Temperature: -55 °C Voltage Rating (DC): 8 V Max Power Dissipation: 200 mW Test Current: 10 mA Continuous Drain Current (ID): 40 mA Gate to Source Voltage (Vgs): 6 V Test Voltage: 5 V

Manufacturer: Infineon Technologies
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1018674-BF 2030R E6814
Packaging: Tape & Reel
Voltage Rating: 8 V
Current Rating: 40 mA
Length: 2.9 mm
Mounting: SMD (SMT)
Drain to Source Voltage (Vdss): 8 V
Frequency: 800 MHz
Input Capacitance: 2.8 pF
Height: 1 mm
Gain: 23 dB
Noise Figure: 1.5 dB
Number of Pins: 4
Width: 1.3 mm
Categories: Transistors - FETs, MOSFETs - RF
Case / Package: SOT-143
Alternative Parts (Cross-Reference): BF 2030R E6814BF2030R E6814; BF2030RE6814;
Popularity: Low
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 150 °C
Lead Free: Yes
Mount: Surface Mount
RoHS: Compliant
Min Operating Temperature: -55 °C
Voltage Rating (DC): 8 V
Max Power Dissipation: 200 mW
Test Current: 10 mA
Continuous Drain Current (ID): 40 mA
Gate to Source Voltage (Vgs): 6 V
Test Voltage: 5 V

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1018674-BF 2030R E6814
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - BF 2030R E6814
PD 200 milliwatts
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