The BF1005S series comprises silicon N-channel MOSFET tetrodes designed for low-noise, high-gain input stages up to 1 GHz, operating at 5 V with an integrated biasing network. The BF1005SR variant is packaged in SOT143R, with pin configuration 1=D, 2=S, 3=G1, 4=G2. It has a maximum drain-source voltage of 8 V, continuous drain current of 25 mA, and total power dissipation of 200 mW. The device is RoHS compliant and qualified to AEC-Q101. Gain is typically 22 dB at 800 MHz with a noise figure of 1.6 to 2.1 dB. Thermal resistance from channel to soldering point is ≤370 K/W. The package dimensions and marking conform to SOT143R specifications.
RF Mosfet N-Channel 5V 800MHz 22dB PG-SOT-143R-3D
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | BF1005SRE6327-ND |
| Product Name | RF FETs, MOSFETs |
| Package Type | SOT143; SOT-143R |
