Infineon Technologies AG BCR158WE6327

Description
Digital Transistor
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Description
Digital Transistor
Request a Quote
Datasheet
Datasheet Summary
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The BCR158W is a PNP silicon digital transistor with built-in bias resistors of 2.2 kΩ and 47 kΩ, designed for switching, inverter, interface, and driver circuits. It is housed in an SOT323 package and meets AEC-Q101 qualification standards. The device has a maximum collector-emitter voltage of 50 V, a continuous collector current of 100 mA, and a total power dissipation of 250 mW at a case temperature of 124°C. The junction temperature rating is 150°C. It is RoHS compliant, with a transition frequency of 200 MHz and a collector-emitter saturation voltage of up to 0.3 V at 10 mA collector current and 0.5 mA base current. Input resistor values range from 1.5 to 2.9 kΩ, with a resistor ratio of 0.042 to 0.052.

Datasheet Summary
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The BCR158W is a PNP silicon digital transistor with built-in bias resistors of 2.2 kΩ and 47 kΩ, designed for switching, inverter, interface, and driver circuits. It is housed in an SOT323 package and meets AEC-Q101 qualification standards. The device has a maximum collector-emitter voltage of 50 V, a continuous collector current of 100 mA, and a total power dissipation of 250 mW at a case temperature of 124°C. The junction temperature rating is 150°C. It is RoHS compliant, with a transition frequency of 200 MHz and a collector-emitter saturation voltage of up to 0.3 V at 10 mA collector current and 0.5 mA base current. Input resistor values range from 1.5 to 2.9 kΩ, with a resistor ratio of 0.042 to 0.052.

Suppliers

Company
Product
Description
Supplier Links
 - BCR158WE6327 - Rochester Electronics
Newburyport, MA, United States
Digital Transistor

Digital Transistor

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Transistors
Product Number BCR158WE6327
Package Type SOT323
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