Infineon Technologies AG BCR146T E6327

Description
Digital Transistor
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Description
Digital Transistor
Request a Quote
Datasheet
Datasheet Summary
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BCR146T is an NPN silicon digital transistor with built-in bias resistors (R1=47kΩ, R2=22kΩ) designed for switching, inverter, interface, and driver circuits. It is packaged in SC75. The collector-emitter voltage rating is 50 V, the maximum collector current is 70 mA, and the total power dissipation is 250 mW at a case temperature of 109°C. The junction temperature rating is 150°C. The DC current gain is at least 50 at a collector current of 5 mA and a collector-emitter voltage of 5 V. The collector-emitter saturation voltage is 0.3 V max at a collector current of 10 mA and a base current of 0.5 mA. The transition frequency is 150 MHz. The part is supplied in reels of 3,000 pieces per reel under code E6327.

Datasheet Summary
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BCR146T is an NPN silicon digital transistor with built-in bias resistors (R1=47kΩ, R2=22kΩ) designed for switching, inverter, interface, and driver circuits. It is packaged in SC75. The collector-emitter voltage rating is 50 V, the maximum collector current is 70 mA, and the total power dissipation is 250 mW at a case temperature of 109°C. The junction temperature rating is 150°C. The DC current gain is at least 50 at a collector current of 5 mA and a collector-emitter voltage of 5 V. The collector-emitter saturation voltage is 0.3 V max at a collector current of 10 mA and a base current of 0.5 mA. The transition frequency is 150 MHz. The part is supplied in reels of 3,000 pieces per reel under code E6327.

Suppliers

Company
Product
Description
Supplier Links
 - BCR146T E6327 - Rochester Electronics
Newburyport, MA, United States
Digital Transistor

Digital Transistor

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Transistors
Product Number BCR146T E6327
Package Type SOT23; SOT-23-3
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