Infineon Technologies AG Single, Pre-Biased Bipolar Transistors BCR 189F E6327

PNP silicon digital transistor with built-in 22 kΩ bias resistor for switching, inverter, and driver circuits, available in a TSLP-3 package, rated for 50 V collector-emitter voltage, 100 mA collector current, and 250 mW total power dissipation at up to 128 °C junction temperature, with a transition frequency of 200 MHz and junction-to-solder-point thermal resistance ≤ 90 K/W, meeting AEC-Q200 and RoHS standards.