Infineon Technologies AG Single, Pre-Biased Bipolar Transistors BCR 114T E6327

NPN silicon digital transistor with built-in bias resistors (R1 = 4.7 kΩ, R2 = 10 kΩ) for switching, inverter, and driver circuits, in an SC75 package. Rated for a collector-emitter voltage of 50 V, collector current of 100 mA, and total power dissipation of 250 mW at TJ ≤ 109°C. Junction temperature rises to 150°C. Transition frequency is 160 MHz. Collector-emitter saturation voltage is 0.3 V at IC = 10 mA and IB = 0.5 mA. Input on voltage ranges from 0.5 V to 1.4 V. Thermal resistance from junction to soldering point is ≤ 165 K/W.