Infineon Technologies AG TRANSISTORS - Transistors (BJT) - Single - BCP5616E6327HTSA1 BCP5616E6327HTSA1

Manufacturer: Infineon Technologies
Win Source Part Number: 109431-BCP5616E6327HTSA1
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 100MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: PG-SOT223-4
Maximum Current Collector: 1A
VCEO Maximum Collector-Emitter Breakdown Voltage: 80V
Max Vce (sat): 500mV @ 50mA, 500mA
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 100 @ 150mA, 2V
Maximum Power Dissipation: 2W
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Balance

Bipolar (BJT) Transistor NPN 80V 1A 100MHz 2W Surface Mount PG-SOT223-4-10

TRANS NPN 80V 1A SOT223-4 Product overview: BCP5616E6327HTSA1 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 1A. Search-friendly keywords include transistor, BJT, switching, amplification, 80V, 1A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-BCP5616E6327HTSA1 can be used for catalog matching and distributor lookup.