Infineon Technologies AG BCP49E6419

Description
Small Signal Bipolar Transistor
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Description
Small Signal Bipolar Transistor
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Datasheet
Datasheet Summary
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The BCP49 is an NPN silicon Darlington transistor for general audio frequency applications, housed in a SOT223 package with dimensions of 6.5 mm × 3.5 mm × 1.75 mm. It supports a maximum collector-emitter voltage of 60 V, a continuous collector current of 500 mA, and a peak collector current of 800 mA, with a total power dissipation of 1.5 W at 124 °C. It achieves a minimum DC current gain of 2000 and is qualified to AEC-Q101 standards. The package is RoHS compliant.

Datasheet Summary
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The BCP49 is an NPN silicon Darlington transistor for general audio frequency applications, housed in a SOT223 package with dimensions of 6.5 mm × 3.5 mm × 1.75 mm. It supports a maximum collector-emitter voltage of 60 V, a continuous collector current of 500 mA, and a peak collector current of 800 mA, with a total power dissipation of 1.5 W at 124 °C. It achieves a minimum DC current gain of 2000 and is qualified to AEC-Q101 standards. The package is RoHS compliant.

Suppliers

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Description
Supplier Links
 - BCP49E6419 - Rochester Electronics
Newburyport, MA, United States
Small Signal Bipolar Transistor

Small Signal Bipolar Transistor

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Bipolar RF Transistors
Product Number BCP49E6419
Package Type SOT223; SOT-223
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