Infineon Technologies AG Single Bipolar Transistors BCP 55-16 E6327

NPN silicon bipolar transistor for audio driver and output stages, in a SOT223 surface-mount package. Rated for a collector-emitter voltage of 60 V, collector current of 1 A, and total power dissipation of 2 W at a case temperature of 120°C. Junction temperature ranges from -65°C to 150°C. Characterized by a DC current gain (hFE) of 100 to 250 at 150 mA collector current and 2 V collector-emitter voltage, with a collector-emitter saturation voltage of no more than 0.5 V at 500 mA collector current and 50 mA base current. Transition frequency is 100 MHz. RoHS compliant and qualified to AEC-Q101 standard.