Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 2-Element, PNP, Silicon
Manufacturer: Infineon Technologies
Win Source Part Number: 109924-BCM856SH6327X
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 250MHz
Transistor Polarity: 2 PNP (Dual)
Categories: Discrete Semiconductor Products
Temperature Range - Operating: 150°C (TJ)
Case / Package: PG-SOT363-6
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 65V
Max Vce (sat): 650mV @ 5mA, 100mA
Collector Cut-off Current(Max): 15nA (ICBO)
Typical Gain (hFE) (Min): 200 @ 2mA, 5V
Maximum Power Dissipation: 250mW
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Balance
TRANS 2PNP 65V 0.1A PG-SOT363-PO
Bipolar (BJT) Transistor Array 2 PNP (Dual) 65V 100mA 250MHz 250mW Surface Mount PG-SOT363-PO
TRANS 2PNP 65V 0.1A SOT363 Product overview: BCM856SH6327XTSA1 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 65V, 0.1A. Search-friendly keywords include transistor, BJT, switching, amplification, 65V, 0.1A, Bipolar Transistor, Bipolar Transistor Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 277-BCM856SH6327XTSA
Bipolar Transistors - BJT AF TRANSISTOR
TRANS 2PNP 65V 0.1A SOT363
TRANS, PNP, DUAL, -65V, SOT363; Transistor Polarity:Dual PNP; Collector Emitter Voltage V(br)ceo:-65V; Power Dissipation Pd:250mW; DC Collector Current:-100mA; DC Current Gain hFE:200hFE; Transistor Case Style:SOT-363; No. of RoHS Compliant: Yes
| Rochester Electronics | Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Bipolar RF Transistors | Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Transistors |
| Product Number | BCM856SH6327XTSA1 | 109924-BCM856SH6327XTSA1 | BCM856SH6327XTSA1CT-ND | 277-BCM856SH6327XTSA1 | BCM856SH6327XTSA1 | BCM856SH6327XTSA1 | 03AJ0023 |
| Product Name | TRANSISTORS - Transistors (BJT) - Arrays - BCM856SH6327XTSA1 | Bipolar Transistor Arrays | 65V 0.1A Bipolar Transistor | Bipolar Transistors - BJT | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Trans, Pnp, Dual, -65V, Sot363; Transistor Polarity Infineon | |
| Polarity | PNP | PNP; 2 PNP (Dual) | PNP | PNP | PNP | ||
| Package Type | PG-SOT363-6 | SOT3; PG-SOT363-6 | 6-VSSOP, SC-88, SOT-363 | Tape & Reel (TR) | TO-3; SOT3 | ||
| Packing Method | Tape Reel; Tape & Reel | Tape & Reel (TR) | Tape Reel; Tape & Reel (TR) | ||||
| IC(max) | 100 milliamps | 100 milliamps | |||||
| VCEO | 65 volts | 65 volts |
