Infineon Technologies AG Bipolar Transistors - BJT BCM 846S H6327

The BCM846S is a dual NPN silicon AF transistor array in a SOT363 package, designed for current mirror applications with precision-matched characteristics. Each transistor features a collector-emitter voltage rating of 65 V, a collector current capability of 100 mA, and a total power dissipation of 250 mW at 115 °C. The device exhibits low collector-emitter saturation voltage, with values up to 650 mV at 100 mA collector current and 5 mA base current. Transition frequency is 250 MHz at 20 mA collector current, and the transistors are matched with a current gain variation of ±10% across the pair. The package is Pb-free and RoHS compliant, and the part is qualified to AEC-Q101 standards.