Infineon Technologies AG Small Signal Transistors & Diodes - Bipolar Transistor - General Purpose Transistor - BC858C BC858C

The BC858C is a PNP silicon AF transistor designed for AF input stages and driver applications. It is packaged in SOT23 with a pin configuration of 1=B, 2=E, 3=C. It has a collector-emitter voltage rating of 30 V, a collector current of 100 mA, and a total power dissipation of 330 mW at T_S ≤ 71 °C. The device has a DC current gain (h_FE) ranging from 420 to 800 at I_C = 2 mA and V_CE = 5 V, a collector-emitter saturation voltage of up to 650 mV at I_C = 100 mA and I_B = 5 mA, and a transition frequency of 250 MHz. The package is RoHS compliant and the part meets AEC-Q101 qualification standards except for the BC857BL3 variant, which is not qualified.