Infineon Technologies AG Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors BC858AE6327HTSA1

Description
Win Source Part Number: 1377964-BC858AE6327H TSA1 Category: Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors Package: Tape & Reel Temperature Range - Operating: 150°C (TJ) Fake Threat In the Open Market: 36 pct. MSL Level: 1 (Unlimited) Mfr: Infineon Technologies Product Status: Last Time Buy Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23 Base Product Number: BC858 Mounting Type: Surface Mount HTSUS: 8541.21.0075 REACH Status: REACH Unaffected ECCN: EAR99 Transistor Type: PNP Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 30 V DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) Frequency - Transition: 250MHz Power - Max: 330 mW
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors - 1377964-BC858AE6327HTSA1 - Win Source Electronics
    Win Source Electronics
  • Single Bipolar Transistors - BC858AE6327HTSA1TR-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BC858AE6327HTSA1 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Win Source Part Number: 1377964-BC858AE6327H TSA1 Category: Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors Package: Tape & Reel Temperature Range - Operating: 150°C (TJ) Fake Threat In the Open Market: 36 pct. MSL Level: 1 (Unlimited) Mfr: Infineon Technologies Product Status: Last Time Buy Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23 Base Product Number: BC858 Mounting Type: Surface Mount HTSUS: 8541.21.0075 REACH Status: REACH Unaffected ECCN: EAR99 Transistor Type: PNP Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 30 V DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) Frequency - Transition: 250MHz Power - Max: 330 mW
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors - 1377964-BC858AE6327HTSA1 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
1377964-BC858AE6327HTSA1
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors 1377964-BC858AE6327HTSA1
Win Source Part Number: 1377964-BC858AE6327H TSA1 Category: Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors Package: Tape & Reel Temperature Range - Operating: 150°C (TJ) Fake Threat In the Open Market: 36 pct. MSL Level: 1 (Unlimited) Mfr: Infineon Technologies Product Status: Last Time Buy Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23 Base Product Number: BC858 Mounting Type: Surface Mount HTSUS: 8541.21.0075 REACH Status: REACH Unaffected ECCN: EAR99 Transistor Type: PNP Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 30 V DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) Frequency - Transition: 250MHz Power - Max: 330 mW

Win Source Part Number: 1377964-BC858AE6327HTSA1
Category: Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Package: Tape & Reel
Temperature Range - Operating: 150°C (TJ)
Fake Threat In the Open Market: 36 pct.
MSL Level: 1 (Unlimited)
Mfr: Infineon Technologies
Product Status: Last Time Buy
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23
Base Product Number: BC858
Mounting Type: Surface Mount
HTSUS: 8541.21.0075
REACH Status: REACH Unaffected
ECCN: EAR99
Transistor Type: PNP
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 330 mW

Buy Now Datasheet
Single Bipolar Transistors - BC858AE6327HTSA1TR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
BC858AE6327HTSA1TR-ND
Single Bipolar Transistors BC858AE6327HTSA1TR-ND
Bipolar (BJT) Transistor PNP 30V 100mA 250MHz 330mW Surface Mount PG-SOT23

Bipolar (BJT) Transistor PNP 30V 100mA 250MHz 330mW Surface Mount PG-SOT23

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BC858AE6327HTSA1 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
BC858AE6327HTSA1
Discrete Semiconductor Products - Transistors - Bipolar (BJT) BC858AE6327HTSA1
TRANS PNP 30V 0.1A SOT-23

TRANS PNP 30V 0.1A SOT-23

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors
Product Number 1377964-BC858AE6327HTSA1 BC858AE6327HTSA1TR-ND BC858AE6327HTSA1
Product Name Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors Single Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP PNP
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