BC858A is a PNP silicon bipolar transistor designed for AF input stages and driver applications, packaged in SOT23 with pins 1=B, 2=E, 3=C. It has a maximum collector-emitter voltage of 30 V, a collector current rating of 100 mA, and a total power dissipation of 330 mW at 71 °C. The DC current gain (hFE) ranges from 220 to 475 at I_C = 2 mA and V_CE = 5 V. The collector-emitter saturation voltage is up to 650 mV at I_C = 100 mA and I_B = 5 mA. The base-emitter saturation voltage is up to 850 mV under the same conditions. The device is RoHS compliant and operates with a junction temperature up to 150 °C.
NPN Silicon AF Transistors
Summary of Features
Potential Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | BC858A |
| Product Name | Small Signal Transistors & Diodes - Bipolar Transistor - General Purpose Transistor - BC858A |
| Polarity | PNP (Single); PNP |
| Package Type | SOT23; SOT23 |
| Packing Method | Tape Reel; TAPE & REEL |
| IC(max) | 100 milliamps |
