Infineon Technologies AG Small Signal Transistors & Diodes - Bipolar Transistor - General Purpose Transistor - BC857A BC857A

Description
NPN Silicon AF Transistors Summary of Features High current gain Low collector-emitter saturation voltage Low noise between 30 hz and 15 kHz Complementary types: BC847...-BC850... (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q101 1) Potential Applications For AF input stages and driver applications
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Description
NPN Silicon AF Transistors Summary of Features High current gain Low collector-emitter saturation voltage Low noise between 30 hz and 15 kHz Complementary types: BC847...-BC850... (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q101 1) Potential Applications For AF input stages and driver applications
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Datasheet
Datasheet Summary
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The BC857A is a PNP silicon bipolar transistor for audio frequency input stages and driver applications, housed in an SOT23 package. It has a collector-emitter voltage rating of 45 V, a collector-base voltage rating of 50 V, and a maximum collector current of 100 mA. Total power dissipation is 330 mW at junction temperatures up to 71 °C. The device features a DC current gain (hFE) range of 125 to 250 at a collector current of 2 mA and a collector-emitter voltage of 5 V. The collector-emitter saturation voltage is specified up to 300 mV at a collector current of 10 mA and a base current of 0.5 mA. It is RoHS compliant and meets the AEC Q101 qualification standard.

Datasheet Summary
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The BC857A is a PNP silicon bipolar transistor for audio frequency input stages and driver applications, housed in an SOT23 package. It has a collector-emitter voltage rating of 45 V, a collector-base voltage rating of 50 V, and a maximum collector current of 100 mA. Total power dissipation is 330 mW at junction temperatures up to 71 °C. The device features a DC current gain (hFE) range of 125 to 250 at a collector current of 2 mA and a collector-emitter voltage of 5 V. The collector-emitter saturation voltage is specified up to 300 mV at a collector current of 10 mA and a base current of 0.5 mA. It is RoHS compliant and meets the AEC Q101 qualification standard.

Suppliers

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Small Signal Transistors & Diodes - Bipolar Transistor - General Purpose Transistor - BC857A - BC857A - Infineon Technologies AG
Neubiberg, Germany
Small Signal Transistors & Diodes - Bipolar Transistor - General Purpose Transistor - BC857A
BC857A
Small Signal Transistors & Diodes - Bipolar Transistor - General Purpose Transistor - BC857A BC857A
NPN Silicon AF Transistors Summary of Features High current gain Low collector-emitter saturation voltage Low noise between 30 hz and 15 kHz Complementary types: BC847...-BC850... (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q101 1) Potential Applications For AF input stages and driver applications

NPN Silicon AF Transistors


Summary of Features

  • High current gain
  • Low collector-emitter saturation voltage
  • Low noise between 30 hz and 15 kHz
  • Complementary types: BC847...-BC850... (NPN)
  • Pb-free (RoHS compliant) package
  • Qualified according AEC Q101 1)

Potential Applications

  • For AF input stages and driver applications
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Bipolar RF Transistors
Product Number BC857A
Product Name Small Signal Transistors & Diodes - Bipolar Transistor - General Purpose Transistor - BC857A
Polarity PNP (Single); PNP
Package Type SOT23; SOT23
Packing Method Tape Reel; TAPE & REEL
IC(max) 100 milliamps
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