Infineon Technologies AG Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays BC856SH6327XTSA1

Description
Win Source Part Number: 964431-BC856SH6327XT SA1 Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays Package: Tape & Reel (TR) Standard Package: 3,000 Mounting: SMD (SMT) Power - Max: 250mW Voltage - Collector Emitter Breakdown (Max): 65V Current - Collector (Ic) (Max): 100mA Transistor Type: 2 PNP (Dual) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 250MHz Package / Case: 6-VSSOP, SC-88, SOT-363 Supplier Device Package: PG-SOT363-PO Temperature Range - Operating: 150°C (TJ) Alternative Parts (Cross-Reference): MUN5237DW1T1; MUN5235DW1T1; MUN5216DW1T1; MUN5212DW1T1; SBC847BPDW1T3G; DIMD10A-7BC 856S; BC 856S H6327; BC856S; BC856S H6327; BC856SH6327; SP000747446; ECCN: EAR99 Fake Threat In the Open Market: 71 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.21.0075 Mfr: Infineon Technologies Other Names: BC 856S H6327-ND,BC 856S H6327,BC856SH6327XTS A1TR,SP000747446 Base Product Number: BC856 Product Status: Not For New Designs
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Description
Win Source Part Number: 964431-BC856SH6327XT SA1 Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays Package: Tape & Reel (TR) Standard Package: 3,000 Mounting: SMD (SMT) Power - Max: 250mW Voltage - Collector Emitter Breakdown (Max): 65V Current - Collector (Ic) (Max): 100mA Transistor Type: 2 PNP (Dual) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 250MHz Package / Case: 6-VSSOP, SC-88, SOT-363 Supplier Device Package: PG-SOT363-PO Temperature Range - Operating: 150°C (TJ) Alternative Parts (Cross-Reference): MUN5237DW1T1; MUN5235DW1T1; MUN5216DW1T1; MUN5212DW1T1; SBC847BPDW1T3G; DIMD10A-7BC 856S; BC 856S H6327; BC856S; BC856S H6327; BC856SH6327; SP000747446; ECCN: EAR99 Fake Threat In the Open Market: 71 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.21.0075 Mfr: Infineon Technologies Other Names: BC 856S H6327-ND,BC 856S H6327,BC856SH6327XTS A1TR,SP000747446 Base Product Number: BC856 Product Status: Not For New Designs
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays - 964431-BC856SH6327XTSA1 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays
964431-BC856SH6327XTSA1
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays 964431-BC856SH6327XTSA1
Win Source Part Number: 964431-BC856SH6327XT SA1 Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays Package: Tape & Reel (TR) Standard Package: 3,000 Mounting: SMD (SMT) Power - Max: 250mW Voltage - Collector Emitter Breakdown (Max): 65V Current - Collector (Ic) (Max): 100mA Transistor Type: 2 PNP (Dual) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 250MHz Package / Case: 6-VSSOP, SC-88, SOT-363 Supplier Device Package: PG-SOT363-PO Temperature Range - Operating: 150°C (TJ) Alternative Parts (Cross-Reference): MUN5237DW1T1; MUN5235DW1T1; MUN5216DW1T1; MUN5212DW1T1; SBC847BPDW1T3G; DIMD10A-7BC 856S; BC 856S H6327; BC856S; BC856S H6327; BC856SH6327; SP000747446; ECCN: EAR99 Fake Threat In the Open Market: 71 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.21.0075 Mfr: Infineon Technologies Other Names: BC 856S H6327-ND,BC 856S H6327,BC856SH6327XTS A1TR,SP000747446 Base Product Number: BC856 Product Status: Not For New Designs

Win Source Part Number: 964431-BC856SH6327XTSA1
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays
Package: Tape & Reel (TR)
Standard Package: 3,000
Mounting: SMD (SMT)
Power - Max: 250mW
Voltage - Collector Emitter Breakdown (Max): 65V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 2 PNP (Dual)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Package / Case: 6-VSSOP, SC-88, SOT-363
Supplier Device Package: PG-SOT363-PO
Temperature Range - Operating: 150°C (TJ)
Alternative Parts (Cross-Reference): MUN5237DW1T1; MUN5235DW1T1; MUN5216DW1T1; MUN5212DW1T1; SBC847BPDW1T3G; DIMD10A-7BC 856S; BC 856S H6327; BC856S; BC856S H6327; BC856SH6327; SP000747446;
ECCN: EAR99
Fake Threat In the Open Market: 71 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.21.0075
Mfr: Infineon Technologies
Other Names: BC 856S H6327-ND,BC 856S H6327,BC856SH6327XTSA1TR,SP000747446
Base Product Number: BC856
Product Status: Not For New Designs

Buy Now Datasheet
Singapore, Singapore
65V 0.1A Bipolar Transistor
277-BC856SH6327XTSA1
65V 0.1A Bipolar Transistor 277-BC856SH6327XTSA1
TRANS 2PNP 65V 0.1A SOT363 Product overview: BC856SH6327XTSA1 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 65V, 0.1A. Search-friendly keywords include transistor, BJT, switching, amplification, 65V, 0.1A, Bipolar Transistor, Bipolar Transistor Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 277-BC856SH6327XTSA1 can be used for catalog matching and distributor lookup.

TRANS 2PNP 65V 0.1A SOT363 Product overview: BC856SH6327XTSA1 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 65V, 0.1A. Search-friendly keywords include transistor, BJT, switching, amplification, 65V, 0.1A, Bipolar Transistor, Bipolar Transistor Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 277-BC856SH6327XTSA1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
 - BC856SH6327XTSA1 - Rochester Electronics
Newburyport, MA, United States
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 2-Element, PNP, Silicon

Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 2-Element, PNP, Silicon

Supplier's Site Datasheet
Bipolar Transistor Arrays - 448-BC856SH6327XTSA1TR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
448-BC856SH6327XTSA1TR-ND
Bipolar Transistor Arrays 448-BC856SH6327XTSA1TR-ND
Bipolar (BJT) Transistor Array 2 PNP (Dual) 65V 100mA 250MHz 250mW Surface Mount PG-SOT363-6

Bipolar (BJT) Transistor Array 2 PNP (Dual) 65V 100mA 250MHz 250mW Surface Mount PG-SOT363-6

Buy Now Datasheet
Trans, Pnp, Dual, -65V, Sot363; Transistor Polarity Infineon - 03AJ0047 - Newark, An Avnet Company
Chicago, IL, United States
Trans, Pnp, Dual, -65V, Sot363; Transistor Polarity Infineon
03AJ0047
Trans, Pnp, Dual, -65V, Sot363; Transistor Polarity Infineon 03AJ0047
TRANS, PNP, DUAL, -65V, SOT363; Transistor Polarity:Dual PNP; Collector Emitter Voltage V(br)ceo:-65V; Power Dissipation Pd:250mW; DC Collector Current:-100mA; DC Current Gain hFE:200hFE; Transistor Case Style:SOT-363; No. of RoHS Compliant: Yes

TRANS, PNP, DUAL, -65V, SOT363; Transistor Polarity:Dual PNP; Collector Emitter Voltage V(br)ceo:-65V; Power Dissipation Pd:250mW; DC Collector Current:-100mA; DC Current Gain hFE:200hFE; Transistor Case Style:SOT-363; No. of RoHS Compliant: Yes

Supplier's Site
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
BC856SH6327XTSA1
Bipolar Transistors - BJT BC856SH6327XTSA1
Bipolar Transistors - BJT AF TRANSISTOR

Bipolar Transistors - BJT AF TRANSISTOR

Buy Now Datasheet
Bipolar Transistor Arrays - BC856SH6327XTSA1 - ODG (Origin Data Global)
Shenzhen, China
Bipolar Transistor Arrays
BC856SH6327XTSA1
Bipolar Transistor Arrays BC856SH6327XTSA1
TRANS 2PNP 65V 0.1A SOT363

TRANS 2PNP 65V 0.1A SOT363

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BC856SH6327XTSA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
BC856SH6327XTSA1
Discrete Semiconductor Products - Transistors - Bipolar (BJT) BC856SH6327XTSA1
TRANS 2PNP 65V 0.1A SOT363

TRANS 2PNP 65V 0.1A SOT363

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. Rochester Electronics DigiKey Newark, An Avnet Company VAST STOCK CO., LIMITED ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 964431-BC856SH6327XTSA1 277-BC856SH6327XTSA1 BC856SH6327XTSA1 448-BC856SH6327XTSA1TR-ND 03AJ0047 BC856SH6327XTSA1 BC856SH6327XTSA1 BC856SH6327XTSA1
Product Name Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays 65V 0.1A Bipolar Transistor Bipolar Transistor Arrays Trans, Pnp, Dual, -65V, Sot363; Transistor Polarity Infineon Bipolar Transistors - BJT Bipolar Transistor Arrays Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP PNP PNP PNP PNP 2 PNP (Dual); PNP
Package Type SOT3 Tape & Reel (TR) PG-SOT363-6 6-VSSOP, SC-88, SOT-363 TO-3; SOT3 6-VSSOP, SC-88, SOT-363 PG-SOT363-PO
IC(max) 100 milliamps 100 milliamps 100 milliamps 100 milliamps
Power Gain 200 dB
Operating Frequency 250 MHz 250 MHz
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