Infineon Technologies AG Small Signal Transistors & Diodes - Bipolar Transistor - General Purpose Transistor - BC848C BC848C

Description
NPN Silicon AF Transistors Summary of Features High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC857...-BC860...(PN P) Pb-free (RoHS compliant) package Qualified according AEC Q101 1) 1BC847BL3 is not qualified according AEC Q101 Potential Applications For AF input stages and driver applications
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Description
NPN Silicon AF Transistors Summary of Features High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC857...-BC860...(PN P) Pb-free (RoHS compliant) package Qualified according AEC Q101 1) 1BC847BL3 is not qualified according AEC Q101 Potential Applications For AF input stages and driver applications
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Datasheet
Datasheet Summary
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BC848C is an NPN silicon AF transistor designed for AF input stages and driver applications, available in SOT23 package. It has a collector-emitter voltage rating of 30 V, collector current of 100 mA, and total power dissipation of 330 mW at T_S ≤ 71 °C. The DC current gain (h_FE) ranges from 420 to 800 at I_C = 2 mA and V_CE = 5 V. Collector-emitter saturation voltage is typ. 200 mV at I_C = 100 mA and I_B = 5 mA. Transition frequency is 250 MHz at I_C = 10 mA and V_CE = 5 V. The device is Pb-free and RoHS compliant, but not qualified to AEC-Q101.

Datasheet Summary
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BC848C is an NPN silicon AF transistor designed for AF input stages and driver applications, available in SOT23 package. It has a collector-emitter voltage rating of 30 V, collector current of 100 mA, and total power dissipation of 330 mW at T_S ≤ 71 °C. The DC current gain (h_FE) ranges from 420 to 800 at I_C = 2 mA and V_CE = 5 V. Collector-emitter saturation voltage is typ. 200 mV at I_C = 100 mA and I_B = 5 mA. Transition frequency is 250 MHz at I_C = 10 mA and V_CE = 5 V. The device is Pb-free and RoHS compliant, but not qualified to AEC-Q101.

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Small Signal Transistors & Diodes - Bipolar Transistor - General Purpose Transistor - BC848C - BC848C - Infineon Technologies AG
Neubiberg, Germany
Small Signal Transistors & Diodes - Bipolar Transistor - General Purpose Transistor - BC848C
BC848C
Small Signal Transistors & Diodes - Bipolar Transistor - General Purpose Transistor - BC848C BC848C
NPN Silicon AF Transistors Summary of Features High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC857...-BC860...(PN P) Pb-free (RoHS compliant) package Qualified according AEC Q101 1) 1BC847BL3 is not qualified according AEC Q101 Potential Applications For AF input stages and driver applications

NPN Silicon AF Transistors


Summary of Features

  • High current gain
  • Low collector-emitter saturation voltage
  • Low noise between 30 Hz and 15 kHz
  • Complementary types: BC857...-BC860...(PNP)
  • Pb-free (RoHS compliant) package
  • Qualified according AEC Q101 1)
  • 1BC847BL3 is not qualified according AEC Q101

Potential Applications

  • For AF input stages and driver applications
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Bipolar RF Transistors
Product Number BC848C
Product Name Small Signal Transistors & Diodes - Bipolar Transistor - General Purpose Transistor - BC848C
Polarity NPN (Single); NPN
Package Type SOT23; SOT23
Packing Method Tape Reel; TAPE & REEL
IC(max) 100 milliamps
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