NPN silicon bipolar transistor for AF input stages and driver applications, in an SOT323 package. It has a maximum collector-emitter voltage of 30 V, collector current of 100 mA, and total power dissipation of 250 mW at a case temperature of 124 °C. The transistor offers high current gain with hFE groups ranging from 200 to 450 for the B variant, and low collector-emitter saturation voltage down to 200 mV at 100 mA collector current. It meets RoHS requirements and has a junction temperature rating of 150 °C. Noise figure is specified at ≤4 dB for frequencies between 10 Hz and 50 Hz under specific conditions.
NPN Silicon AF Transistors
Summary of Features
Potential Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | BC848BW |
| Product Name | Small Signal Transistors & Diodes - Bipolar Transistor - General Purpose Transistor - BC848BW |
| Polarity | NPN (Single); NPN |
| Package Type | SOT323; SOT323 |
| Packing Method | Tape Reel; TAPE & REEL |
| IC(max) | 100 milliamps |
