The BC847S is a dual NPN silicon AF transistor array in a SOT363 package, designed for AF input stages and driver applications. Each transistor features a collector-emitter voltage rating of 45 V, a collector-base voltage rating of 50 V, and a maximum collector current of 100 mA. The total power dissipation is 250 mW at a case temperature of 115 °C, with a junction temperature limit of 150 °C. The thermal resistance from junction to soldering point is ≤140 K/W. The devices are RoHS compliant and qualified to AEC-Q101 standards. The package includes two internally isolated transistors with good electrical matching.
NPN Silicon AF Transistor Arrays
Summary of Features
Potential Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | BC847S |
| Product Name | Small Signal Transistors & Diodes - Bipolar Transistor - General Purpose Transistor - BC847S |
| Polarity | NPN (Dual); NPN |
| Package Type | SOT363 |
| Packing Method | Tape Reel; TAPE & REEL |
| IC(max) | 100 milliamps |
