Infineon Technologies AG Bipolar Transistor, General Purpose Transistor BC847CW

Description
NPN Silicon AF Transistors Summary of Features High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC857...-BC860...(PN P) Pb-free (RoHS compliant) package Qualified according AEC Q101 1) 1BC847BL3 is not qualified according AEC Q101 Potential Applications For AF input stages and driver applications
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Description
NPN Silicon AF Transistors Summary of Features High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC857...-BC860...(PN P) Pb-free (RoHS compliant) package Qualified according AEC Q101 1) 1BC847BL3 is not qualified according AEC Q101 Potential Applications For AF input stages and driver applications
Request a Quote
Datasheet
Datasheet Summary
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BC847CW is an NPN silicon AF transistor in an SOT323 package, designed for AF input stages and driver applications. It has a collector-emitter voltage rating of 45 V, a collector current limit of 100 mA, and a total power dissipation of 250 mW at ambient temperatures up to 124 °C. The device offers high current gain with hFE groups from 420 to 800 at I_C = 2 mA and V_CE = 5 V, low collector-emitter saturation voltage up to 250 mV at I_C = 10 mA and I_B = 0.5 mA, and low noise with a figure of merit of 1.2 to 4 dB between 30 Hz and 15 kHz. It is RoHS compliant and does not meet AEC-Q101 qualification. The thermal resistance from junction to soldering point is ≤105 K/W. Transition frequency is 250 MHz at I_C = 10 mA and V_CE = 5 V.

Datasheet Summary
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BC847CW is an NPN silicon AF transistor in an SOT323 package, designed for AF input stages and driver applications. It has a collector-emitter voltage rating of 45 V, a collector current limit of 100 mA, and a total power dissipation of 250 mW at ambient temperatures up to 124 °C. The device offers high current gain with hFE groups from 420 to 800 at I_C = 2 mA and V_CE = 5 V, low collector-emitter saturation voltage up to 250 mV at I_C = 10 mA and I_B = 0.5 mA, and low noise with a figure of merit of 1.2 to 4 dB between 30 Hz and 15 kHz. It is RoHS compliant and does not meet AEC-Q101 qualification. The thermal resistance from junction to soldering point is ≤105 K/W. Transition frequency is 250 MHz at I_C = 10 mA and V_CE = 5 V.

Suppliers

Company
Product
Description
Supplier Links
Bipolar Transistor, General Purpose Transistor - BC847CW - Infineon Technologies AG
Neubiberg, Germany
Bipolar Transistor, General Purpose Transistor
BC847CW
Bipolar Transistor, General Purpose Transistor BC847CW
NPN Silicon AF Transistors Summary of Features High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC857...-BC860...(PN P) Pb-free (RoHS compliant) package Qualified according AEC Q101 1) 1BC847BL3 is not qualified according AEC Q101 Potential Applications For AF input stages and driver applications

NPN Silicon AF Transistors


Summary of Features

  • High current gain
  • Low collector-emitter saturation voltage
  • Low noise between 30 Hz and 15 kHz
  • Complementary types: BC857...-BC860...(PNP)
  • Pb-free (RoHS compliant) package
  • Qualified according AEC Q101 1)
  • 1BC847BL3 is not qualified according AEC Q101

Potential Applications

  • For AF input stages and driver applications
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Bipolar RF Transistors
Product Number BC847CW
Product Name Bipolar Transistor, General Purpose Transistor
Polarity NPN (Single); NPN
Package Type SOT323; SOT323
Packing Method Tape Reel; TAPE & REEL
IC(max) 100 milliamps
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