Infineon Technologies AG Bipolar Transistor, General Purpose Transistor BC847BW

Description
NPN Silicon AF Transistors Summary of Features High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC857...-BC860...(PN P) Pb-free (RoHS compliant) package Qualified according AEC Q1011 BC847BL3 is not qualified according AEC Q101 1BC847BL3 is not qualified according AEC Q101 Potential Applications For AF input stages and driver applications
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Description
NPN Silicon AF Transistors Summary of Features High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC857...-BC860...(PN P) Pb-free (RoHS compliant) package Qualified according AEC Q1011 BC847BL3 is not qualified according AEC Q101 1BC847BL3 is not qualified according AEC Q101 Potential Applications For AF input stages and driver applications
Request a Quote
Datasheet
Datasheet Summary
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BC847BW is an NPN silicon AF transistor in a SOT323 package, designed for AF input stages and driver applications. It has a collector-emitter voltage rating of 45 V, a collector current rating of 100 mA, and a total power dissipation of 250 mW at a case temperature of 124 °C. The transistor features a high DC current gain (hₑₑ) ranging from 200 to 450 for the B-group, a low collector-emitter saturation voltage of up to 600 mV at 100 mA collector current, and a transition frequency of 250 MHz. It is RoHS compliant and has a junction temperature rating of 150 °C. The device exhibits low noise between 30 Hz and 15 kHz, with a typical noise figure of 1.2 dB at 200 µA collector current. The SOT323 package measures 2.0 mm × 1.25 mm × 1.0 mm based on the package outline.

Datasheet Summary
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BC847BW is an NPN silicon AF transistor in a SOT323 package, designed for AF input stages and driver applications. It has a collector-emitter voltage rating of 45 V, a collector current rating of 100 mA, and a total power dissipation of 250 mW at a case temperature of 124 °C. The transistor features a high DC current gain (hₑₑ) ranging from 200 to 450 for the B-group, a low collector-emitter saturation voltage of up to 600 mV at 100 mA collector current, and a transition frequency of 250 MHz. It is RoHS compliant and has a junction temperature rating of 150 °C. The device exhibits low noise between 30 Hz and 15 kHz, with a typical noise figure of 1.2 dB at 200 µA collector current. The SOT323 package measures 2.0 mm × 1.25 mm × 1.0 mm based on the package outline.

Suppliers

Company
Product
Description
Supplier Links
Bipolar Transistor, General Purpose Transistor - BC847BW - Infineon Technologies AG
Neubiberg, Germany
Bipolar Transistor, General Purpose Transistor
BC847BW
Bipolar Transistor, General Purpose Transistor BC847BW
NPN Silicon AF Transistors Summary of Features High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC857...-BC860...(PN P) Pb-free (RoHS compliant) package Qualified according AEC Q1011 BC847BL3 is not qualified according AEC Q101 1BC847BL3 is not qualified according AEC Q101 Potential Applications For AF input stages and driver applications

NPN Silicon AF Transistors


Summary of Features

  • High current gain
  • Low collector-emitter saturation voltage
  • Low noise between 30 Hz and 15 kHz
  • Complementary types: BC857...-BC860...(PNP)
  • Pb-free (RoHS compliant) package
  • Qualified according AEC Q1011
  • BC847BL3 is not qualified according AEC Q101
  • 1BC847BL3 is not qualified according AEC Q101

Potential Applications

  • For AF input stages and driver applications
Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single - BC847BW - 095953-BC847BW - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - BC847BW
095953-BC847BW
TRANSISTORS - Transistors (BJT) - Single - BC847BW 095953-BC847BW
Manufacturer: Infineon Technologies Win Source Part Number: 095953-BC847BW Family Name: BC847BW Alternative Parts (Cross-Reference): BC850B-AU_R2_00001; BC850BW-AU_R1_00001; BC850C-AU_R2_00001; BC847BW-AU_R1_00001; Introduction Date: April 01, 1996 ECCN: EAR99 Country of Origin: Malaysia, Republic of Korea Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Sufficient Application Field: Used in Audio, Industrial

Manufacturer: Infineon Technologies
Win Source Part Number: 095953-BC847BW
Family Name: BC847BW
Alternative Parts (Cross-Reference): BC850B-AU_R2_00001; BC850BW-AU_R1_00001; BC850C-AU_R2_00001; BC847BW-AU_R1_00001;
Introduction Date: April 01, 1996
ECCN: EAR99
Country of Origin: Malaysia, Republic of Korea
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Audio, Industrial

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Technical Specifications

  Infineon Technologies AG Win Source Electronics
Product Category Bipolar RF Transistors Bipolar RF Transistors
Product Number BC847BW 095953-BC847BW
Product Name Bipolar Transistor, General Purpose Transistor TRANSISTORS - Transistors (BJT) - Single - BC847BW
Polarity NPN (Single); NPN
Package Type SOT323; SOT323 SOT3; SOT323
Packing Method Tape Reel; TAPE & REEL
IC(max) 100 milliamps
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