Infineon Technologies AG Bipolar Transistor, General Purpose Transistor BC846PN

Description
NPN/PNP Silicon AF Transistor Arrays Summary of Features High current gain Low collector-emitter saturation voltage Two (galvanic) internal isolated NPN/PNP transistor in one package Pb-free (RoHS compliant) package Qualified according AEC Q101 Potential Applications For AF input stage and driver applications
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Description
NPN/PNP Silicon AF Transistor Arrays Summary of Features High current gain Low collector-emitter saturation voltage Two (galvanic) internal isolated NPN/PNP transistor in one package Pb-free (RoHS compliant) package Qualified according AEC Q101 Potential Applications For AF input stage and driver applications
Request a Quote Datasheet

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Bipolar Transistor, General Purpose Transistor - BC846PN - Infineon Technologies AG
Neubiberg, Germany
Bipolar Transistor, General Purpose Transistor
BC846PN
Bipolar Transistor, General Purpose Transistor BC846PN
NPN/PNP Silicon AF Transistor Arrays Summary of Features High current gain Low collector-emitter saturation voltage Two (galvanic) internal isolated NPN/PNP transistor in one package Pb-free (RoHS compliant) package Qualified according AEC Q101 Potential Applications For AF input stage and driver applications

NPN/PNP Silicon AF Transistor Arrays


Summary of Features

  • High current gain
  • Low collector-emitter saturation voltage
  • Two (galvanic) internal isolated NPN/PNP transistor in one package
  • Pb-free (RoHS compliant) package
  • Qualified according AEC Q101

Potential Applications

  • For AF input stage and driver applications
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Bipolar RF Transistors
Product Number BC846PN
Product Name Bipolar Transistor, General Purpose Transistor
Polarity NPN/PNP (Dual); NPN; PNP
Package Type SOT363
Packing Method Tape Reel; TAPE & REEL
IC(max) 100 milliamps
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