Infineon Technologies AG Single Bipolar Transistors BC817K-40E6327

Description
BIPOLAR GEN PURPOSE TRANSISTOR
Description
BIPOLAR GEN PURPOSE TRANSISTOR
Datasheet
Datasheet Summary
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NPN silicon AF transistor for general applications, available in SOT23 package, with a collector-emitter voltage rating of 45 V, collector current of 500 mA, and DC current gain ranging from 250 to 630 for the hFE-grp.40 variant. It has a collector-emitter saturation voltage of up to 0.7 V at 500 mA collector current and 50 mA base current, and is Pb-free and AEC-Q101 qualified.

Datasheet Summary
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NPN silicon AF transistor for general applications, available in SOT23 package, with a collector-emitter voltage rating of 45 V, collector current of 500 mA, and DC current gain ranging from 250 to 630 for the hFE-grp.40 variant. It has a collector-emitter saturation voltage of up to 0.7 V at 500 mA collector current and 50 mA base current, and is Pb-free and AEC-Q101 qualified.

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Single Bipolar Transistors - BC817K-40E6327 - ODG (Origin Data Global)
Shenzhen, China
Single Bipolar Transistors
BC817K-40E6327
Single Bipolar Transistors BC817K-40E6327
BIPOLAR GEN PURPOSE TRANSISTOR

BIPOLAR GEN PURPOSE TRANSISTOR

Supplier's Site Datasheet

Technical Specifications

  ODG (Origin Data Global)
Product Category Bipolar RF Transistors
Product Number BC817K-40E6327
Product Name Single Bipolar Transistors
Package Type SOT23; TO-236-3, SC-59, SOT-23-3
IC(max) 500 milliamps
VCEO 45 volts
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