NPN silicon AF transistor for general amplification applications, available in SOT23 and SOT323 packages, with a maximum collector-emitter voltage of 45 V for BC817 variants, a continuous collector current of 500 mA, and a total power dissipation of 500 mW at case temperature ≤ 115 °C. The device has a minimum DC current gain of 160 at I_C = 100 mA and V_CE = 1 V for the -25 gain group, a collector-emitter saturation voltage ≤ 0.7 V at I_C = 500 mA and I_B = 50 mA, and a transition frequency of 170 MHz. It is RoHS compliant and qualified to AEC-Q101.
BIPOLAR GEN PURPOSE TRANSISTOR
| ODG (Origin Data Global) | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | BC817K-25E6327 |
| Product Name | Single Bipolar Transistors |
| Package Type | SOT23; TO-236-3, SC-59, SOT-23-3 |
| IC(max) | 500 milliamps |
| VCEO | 45 volts |
