Infineon Technologies AG BC80725E6327HTSA1

Description
Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon
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Description
Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon
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Datasheet
Datasheet Summary
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PNP silicon transistor for general audio frequency applications, available in SOT23 or SOT323 packages, with a 45 V collector-emitter breakdown voltage, 500 mA continuous collector current, and a maximum power dissipation of 330 mW at 79 °C. It features a DC current gain group of 25 (160 to 400), collector-emitter saturation voltage up to 0.7 V at 500 mA collector current, and transition frequency of 200 MHz. The device is RoHS compliant and qualified to AEC-Q101.

Datasheet Summary
Powered by GS/AI

PNP silicon transistor for general audio frequency applications, available in SOT23 or SOT323 packages, with a 45 V collector-emitter breakdown voltage, 500 mA continuous collector current, and a maximum power dissipation of 330 mW at 79 °C. It features a DC current gain group of 25 (160 to 400), collector-emitter saturation voltage up to 0.7 V at 500 mA collector current, and transition frequency of 200 MHz. The device is RoHS compliant and qualified to AEC-Q101.

Suppliers

Company
Product
Description
Supplier Links
 - BC80725E6327HTSA1 - Rochester Electronics
Newburyport, MA, United States
Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon

Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Bipolar RF Transistors
Product Number BC80725E6327HTSA1
Polarity PNP
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