Infineon Technologies AG BC807-16E6327

PNP silicon AF transistor for general applications, available in SOT23 package with a height of 1.15 mm and a width of 2.9 mm. Rated for a maximum collector-emitter voltage of 45 V and collector current of 500 mA. Features a DC current gain group of 16 (100 to 160), collector-emitter saturation voltage of 0.7 V max at 500 mA collector and 50 mA base current, and transition frequency of 200 MHz. Complies with AEC-Q101 and RoHS standards. Thermal resistance junction-to-solder-point is 215 K/W. Maximum junction and storage temperatures are 150 °C and -65 to 150 °C, respectively.