PNP silicon AF transistor for input stages and driver applications in a TSLP-3-1 package, rated for a collector-emitter voltage of 30 V, collector current of 100 mA, and total power dissipation of 250 mW at a case temperature of 124 °C. The junction temperature limit is 150 °C. The DC current gain is a minimum of 420 at a collector current of 2 mA and a collector-emitter voltage of 5 V. The collector-emitter saturation voltage is up to 650 mV at a collector current of 100 mA and base current of 5 mA. The device is RoHS compliant and qualified to AEC Q101.
Bipolar Transistors - BJT Trans GP BJT PNP 30V 0.1A 3-Pin
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | BC 859C E6327 |
| Product Name | Bipolar Transistors - BJT |
