Infineon Technologies AG Bipolar Transistors - BJT BC 858C E6327

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Bipolar Transistors - BJT PNP Silicon AF TRANSISTOR
Description
Bipolar Transistors - BJT PNP Silicon AF TRANSISTOR
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PNP silicon AF transistor for input stages and drivers, available in SOT23 package, with a collector-emitter voltage rating of 30 V, collector current of 100 mA, and total power dissipation of 330 mW at 71 °C. Features high current gain (hFE up to 800 for grade C), low collector-emitter saturation voltage (max 650 mV at 100 mA), and a transition frequency of 250 MHz. Complies with RoHS standards.

Datasheet Summary
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PNP silicon AF transistor for input stages and drivers, available in SOT23 package, with a collector-emitter voltage rating of 30 V, collector current of 100 mA, and total power dissipation of 330 mW at 71 °C. Features high current gain (hFE up to 800 for grade C), low collector-emitter saturation voltage (max 650 mV at 100 mA), and a transition frequency of 250 MHz. Complies with RoHS standards.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
BC 858C E6327
Bipolar Transistors - BJT BC 858C E6327
Bipolar Transistors - BJT PNP Silicon AF TRANSISTOR

Bipolar Transistors - BJT PNP Silicon AF TRANSISTOR

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number BC 858C E6327
Product Name Bipolar Transistors - BJT
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