PNP silicon AF transistor for amplifier input stages and driver applications, available in SOT23 package with dimensions defined by the standard outline. Rated for a maximum collector-emitter voltage of 30 V, collector-base voltage of 30 V, and collector current of 100 mA. Total power dissipation is 330 mW at 71 °C. Features a minimum DC current gain of 220 and maximum collector-emitter saturation voltage of 650 mV at 100 mA collector current and 5 mA base current. Complies with RoHS and is qualified according to AEC-Q101. Transition frequency is 250 MHz.
Bipolar Transistors - BJT NPN Silicon AF TRANSISTOR
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | BC 858B E6327 |
| Product Name | Bipolar Transistors - BJT |
