PNP silicon AF transistor for input stages and driver applications, available in SOT23 package with dimensions 2.9 mm × 1.3 mm. Rated for a maximum collector-emitter voltage of 30 V, collector current of 100 mA, and total power dissipation of 330 mW at 71 °C. Features a junction temperature limit of 150 °C and RoHS-compliant packaging. Meets AEC-Q101 qualification except for the BC857BL3 variant. Complementary NPN types are BC847-BC850. Thermal resistance from junction to soldering point is ≤240 K/W. DC current gain (h<sub>FE</sub>) categories are A (125-250), B (220-475), and C (420-800) at I<sub>C</sub> = 2 mA and V<sub>CE</sub> = 5 V. Transition frequency is 250 MHz at I<sub>C</sub> = 20 mA. Noise figure is ≤4 dB at I<sub>C</sub> = 0.2 mA. Collector-emitter saturation voltage is ≤300 mV at I<sub>C</sub> = 10 mA and I<sub>B</sub> = 0.5 mA.
Bipolar Transistors - BJT PNP Silicon AF TRANSISTOR
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | BC 857C E6433 |
| Product Name | Bipolar Transistors - BJT |
