PNP silicon AF transistor for input stages and driver applications, available in SOT23 package with dimensions matching the SOT23 footprint, rated for 45 V collector-emitter voltage, 100 mA collector current, and 330 mW total power dissipation at 71 °C, with a junction temperature limit of 150 °C and thermal resistance from junction to soldering point of ≤240 K/W, compliant with RoHS and qualified to AEC-Q101 except for the BC857BL3 variant, with DC current gain (hFE) grouped as C: 420 to 800 at 2 mA collector current, and a transition frequency of 250 MHz at 20 mA collector current.
Bipolar Transistors - BJT AF TRANS GP BJT PNP 45V 0.1A
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | BC 857C E6327 |
| Product Name | Bipolar Transistors - BJT |
