PNP silicon AF transistor for input stages and driver applications, available in SOT23 package, with a collector-emitter voltage rating of 30 V, collector current of 100 mA, and total power dissipation of 330 mW at 71 °C. It features a DC current gain (hFE) group B range of 220 to 475 at 2 mA and 5 V, collector-emitter saturation voltage up to 650 mV at 100 mA, and transition frequency of 250 MHz. The device is RoHS compliant and meets AEC-Q101 qualification, except for the BC857BL3 variant which is excluded. Thermal resistance from junction to soldering point is ≤240 K/W.
Bipolar Transistors - BJT PNP Silicon AF TRANSISTOR
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | BC 857B E6433 |
| Product Name | Bipolar Transistors - BJT |
