Infineon Technologies AG Bipolar Transistors - BJT BC 857B E6327

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Bipolar Transistors - BJT PNP 45 V 100 mA
Description
Bipolar Transistors - BJT PNP 45 V 100 mA
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PNP silicon AF transistor for input stages and driver applications, in SOT23 package, with a collector-emitter voltage rating of 45 V, collector current of 100 mA, and total power dissipation of 330 mW at case temperature up to 71 °C. Features high current gain, low saturation voltage, and low noise between 30 Hz and 15 kHz. Complementary to NPN BC847 series. RoHS compliant.

Datasheet Summary
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PNP silicon AF transistor for input stages and driver applications, in SOT23 package, with a collector-emitter voltage rating of 45 V, collector current of 100 mA, and total power dissipation of 330 mW at case temperature up to 71 °C. Features high current gain, low saturation voltage, and low noise between 30 Hz and 15 kHz. Complementary to NPN BC847 series. RoHS compliant.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
BC 857B E6327
Bipolar Transistors - BJT BC 857B E6327
Bipolar Transistors - BJT PNP 45 V 100 mA

Bipolar Transistors - BJT PNP 45 V 100 mA

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number BC 857B E6327
Product Name Bipolar Transistors - BJT
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