NPN silicon bipolar transistor for AF input stages and driver applications, housed in a SOT23 package, with a collector-emitter voltage rating of 30 V, collector current of 100 mA, and total power dissipation of 330 mW at ambient temperatures up to 71 °C. Features a DC current gain (hFE) range of 200 to 450 for the B-group, collector-emitter saturation voltage up to 600 mV at 100 mA collector current, and a junction temperature limit of 150 °C. RoHS compliant and not qualified to AEC-Q101.
Bipolar Transistors - BJT NPN Silicon AF TRANSISTOR
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | BC 849B E6327 |
| Product Name | Bipolar Transistors - BJT |
