NPN silicon bipolar transistor for AF input stages and driver applications, available in SOT23 package, with collector-emitter voltage rating of 30 V, collector current of 100 mA, total power dissipation of 330 mW at T_S ≤ 71 °C, junction temperature up to 150 °C, and DC current gain h_FE grouped as C (420 to 800) at I_C = 2 mA, V_CE = 5 V. RoHS compliant. Not AEC-Q101 qualified.
Bipolar Transistors - BJT NPN Silicon AF TRANSISTOR
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | BC 848C E6327 |
| Product Name | Bipolar Transistors - BJT |
