Infineon Technologies AG Bipolar Transistors - BJT BC 847A E6327

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Bipolar Transistors - BJT NPN Silicon AF TRANSISTOR
Description
Bipolar Transistors - BJT NPN Silicon AF TRANSISTOR
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NPN silicon AF transistor for amplifier input stages and driver applications, in SOT23 package, with a collector-emitter voltage rating of 45 V, collector current of 100 mA, and total power dissipation of 330 mW at 71 °C. It has a DC current gain (hFE) group A of 110 to 220 at 2 mA and 5 V, a collector-emitter saturation voltage of up to 250 mV at 10 mA collector and 0.5 mA base current, and a base-emitter voltage of 580 to 700 mV at 2 mA. RoHS compliant but not AEC-Q101 qualified. Thermal resistance from junction to soldering point is ≤ 240 K/W.

Datasheet Summary
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NPN silicon AF transistor for amplifier input stages and driver applications, in SOT23 package, with a collector-emitter voltage rating of 45 V, collector current of 100 mA, and total power dissipation of 330 mW at 71 °C. It has a DC current gain (hFE) group A of 110 to 220 at 2 mA and 5 V, a collector-emitter saturation voltage of up to 250 mV at 10 mA collector and 0.5 mA base current, and a base-emitter voltage of 580 to 700 mV at 2 mA. RoHS compliant but not AEC-Q101 qualified. Thermal resistance from junction to soldering point is ≤ 240 K/W.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
BC 847A E6327
Bipolar Transistors - BJT BC 847A E6327
Bipolar Transistors - BJT NPN Silicon AF TRANSISTOR

Bipolar Transistors - BJT NPN Silicon AF TRANSISTOR

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number BC 847A E6327
Product Name Bipolar Transistors - BJT
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