Infineon Technologies AG Bipolar Transistors - BJT BC 846PN H6327

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Bipolar Transistors - BJT AF TRANSISTOR
Description
Bipolar Transistors - BJT AF TRANSISTOR
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BC846PN is a monolithic NPN/PNP transistor array in SOT363 package, designed for audio frequency input stage and driver applications. It features a collector-emitter voltage rating of 65 V, a maximum collector current of 100 mA, and a total power dissipation of 250 mW at case temperatures up to 115°C. The device has a minimum DC current gain of 200 at 2 mA collector current and exhibits a collector-emitter saturation voltage of up to 300 mV at 10 mA collector current and 0.5 mA base current. It is Pb-free, RoHS compliant, and qualified to AEC-Q101. The package dimensions and pin configuration follow the SOT363 layout with pin 1 marked for orientation.

Datasheet Summary
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BC846PN is a monolithic NPN/PNP transistor array in SOT363 package, designed for audio frequency input stage and driver applications. It features a collector-emitter voltage rating of 65 V, a maximum collector current of 100 mA, and a total power dissipation of 250 mW at case temperatures up to 115°C. The device has a minimum DC current gain of 200 at 2 mA collector current and exhibits a collector-emitter saturation voltage of up to 300 mV at 10 mA collector current and 0.5 mA base current. It is Pb-free, RoHS compliant, and qualified to AEC-Q101. The package dimensions and pin configuration follow the SOT363 layout with pin 1 marked for orientation.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
BC 846PN H6327
Bipolar Transistors - BJT BC 846PN H6327
Bipolar Transistors - BJT AF TRANSISTOR

Bipolar Transistors - BJT AF TRANSISTOR

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number BC 846PN H6327
Product Name Bipolar Transistors - BJT
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