Infineon Technologies AG Bipolar Transistors - BJT BC 817UPN E6327

The BC817UPN is a dual NPN silicon AF transistor array in an SC74 package, designed for audio frequency stages and driver applications. Each transistor has a collector-emitter voltage rating of 45 V, a collector current of 500 mA, and a peak collector current of 1000 mA. The total power dissipation is 330 mW at a case temperature below 115 °C. The junction temperature range is -65 °C to 150 °C. The devices feature a high current gain between 160 and 400 at 100 mA collector current, with a collector-emitter saturation voltage of up to 0.7 V. They are RoHS compliant and qualified to AEC-Q101. The pin configuration is E1-B1-C2-E2-B2-C1. The package size and thermal resistance are not specified in physical dimensions but the junction-to-solder-point thermal resistance is 105 K/W.