Infineon Technologies AG Bipolar Transistors - BJT BC 817SU E6327

Description
Bipolar Transistors - BJT NPN 45.0 V 100 mA
Description
Bipolar Transistors - BJT NPN 45.0 V 100 mA
Datasheet
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The BC817SU is an NPN silicon bipolar junction transistor designed for general audio frequency applications. It is packaged in an SC74 surface-mount case measuring 2.9 mm × 1.9 mm with six pins, where pin 1 is marked for orientation. The device supports a maximum collector-emitter voltage of 45 V, a continuous collector current of 500 mA, and a peak collector current of 1 A. It has a total power dissipation of 1000 mW at a case temperature of 100°C and a junction temperature rating of 150°C. The transistor exhibits a DC current gain ranging from 40 to 400 depending on collector current and is qualified to AEC-Q100 standards. The package is lead-free and RoHS compliant.

Datasheet Summary
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The BC817SU is an NPN silicon bipolar junction transistor designed for general audio frequency applications. It is packaged in an SC74 surface-mount case measuring 2.9 mm × 1.9 mm with six pins, where pin 1 is marked for orientation. The device supports a maximum collector-emitter voltage of 45 V, a continuous collector current of 500 mA, and a peak collector current of 1 A. It has a total power dissipation of 1000 mW at a case temperature of 100°C and a junction temperature rating of 150°C. The transistor exhibits a DC current gain ranging from 40 to 400 depending on collector current and is qualified to AEC-Q100 standards. The package is lead-free and RoHS compliant.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
BC 817SU E6327
Bipolar Transistors - BJT BC 817SU E6327
Bipolar Transistors - BJT NPN 45.0 V 100 mA

Bipolar Transistors - BJT NPN 45.0 V 100 mA

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number BC 817SU E6327
Product Name Bipolar Transistors - BJT
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