Infineon Technologies AG Single Bipolar Transistors BC 817-16 E6433

NPN silicon AF transistor for general applications, available in SOT23 or SOT323 packages. Maximum collector-emitter voltage is 45 V for BC817 variants and 25 V for BC818 variants. Collector current is rated at 500 mA continuous and 1000 mA peak. Total power dissipation is 500 mW for SOT23 packages and 250 mW for SOT323 packages at specified temperatures. Junction temperature rating is 150 °C. DC current gain ranges from 100 to 630 depending on gain group. Collector-emitter saturation voltage is up to 0.7 V at 500 mA collector current and 50 mA base current. RoHS compliant and qualified to AEC-Q101.