The AUIRL7732S2TR is an N-channel MOSFET designed for automotive applications, featuring a maximum drain-to-source voltage of 40V and a low on-resistance of 5.0mOc at 10V gate drive. It supports a continuous drain current of 58A at 25¬8C and is capable of handling high repetitive peak currents. The device operates efficiently at temperatures ranging from -55¬8C to 175¬8C, making it suitable for demanding environments. Its advanced DirectFET¬Æ packaging allows for dual-sided cooling, enhancing thermal management in power systems. The MOSFET is also compliant with RoHS and halogen-free standards, and it meets automotive qualification standards (AEC-Q101). With a low gate charge of 22nC, it is optimized for high-frequency applications, including DC-DC converters and motor drives. The AUIRL7732S2TR is packaged in a tape and reel format, with a standard pack quantity of 4800 units, facilitating automated assembly processes.
MOSFET N-CH 40V 14A DIRECTFET SC Product overview: AUIRL7732S2TR from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 14A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 14A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-AUIRL7732S2TR can be used for catalog matching and distributor lookup.
Manufacturer: Infineon Technologies
Win Source Part Number: 1020804-AUIRL7732S2T
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.2W (Ta), 41W (Tc)
Family Name: AUIRL7732S2
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: DIRECTFET SC
Dimension: DirectFET Isometric SC
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 14A (Ta)
Gate-Source Threshold Voltage: 2.5V @ 50μA
Max Gate Charge: 33nC @ 4.5V
Max Input Capacitance: 2020pF @ 25V
Maximum Gate-Source Voltage: ±16V
Maximum Rds On at Id,Vgs: 6.6 mOhm @ 35A, 10V
Alternative Parts (Cross-Reference): AUIRL7732S2TR1;
Introduction Date: January 25, 2011
ECCN: EAR99
Country of Origin: Mexico
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Computers & Computer Peripherals, Portable Devices, Communications & Networking
N-Channel 40V 14A (Ta) 2.2W (Ta), 41W (Tc) Surface Mount DIRECTFET™ SC
MOSFET N-CH 40V 14A DIRECTFET SC
MOSFET N-CH 40V 14A DIRECTFET SC
MOSFET, AEC-Q101, N-CH, 40V, DIRECTFET SC; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:58A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.8V RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-AUIRL7732S2TR | 1020804-AUIRL7732S2TR | 448-AUIRL7732S2TR-ND | AUIRL7732S2TR | 91Y4167 |
| Product Name | 40V 14A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - AUIRL7732S2TR | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, Aec-Q101, N-Ch, 40V, Directfet Sc; Channel Type Infineon |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | ||
| MOSFET Operating Mode | Enhancement | ||||
| V(BR)DSS | 40 volts | 40 volts | |||
| Transconductance | 0.0640 kS | ||||
| PD | 41 milliwatts | 2200 to 41000 milliwatts |
