Infineon Technologies AG Memory 28116699 B

Description
Memory IC
  • Memory - 28116699 B - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
  • Memory - 28116699 B - Lingto Electronic Limited
    Lingto Electronic Limited
Description
Memory IC

Suppliers

Company
Product
Description
Supplier Links
Memory - 28116699 B - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
28116699 B
Memory 28116699 B
Memory IC

Memory IC

Buy Now
Memory - 28116699 B - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
28116699 B
Memory 28116699 B
IC MEMORY NOR

IC MEMORY NOR

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips
Product Number 28116699 B 28116699 B
Product Name Memory Memory
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 16-4134-01-T - Quarktwin Technology Ltd.
Infineon Technologies AG
Memory
16-4134-01-T
View Details
2 suppliers
Memory - 27C512-15/PQTP - Lingto Electronic Limited
Rochester Electronics
Memory
27C512-15/PQTP
Specs
Memory Category EPROM; EPROM
Access Time 150 ns
Density 512 kbits
View Details
Memory IC and Storage Component - 736-DP8429D-80 - ERSAELECTRONICS PTE. LTD.
Texas Instruments
Memory IC and Storage Component
DP8429D-80
Specs
Memory Category DRAM Chip
Operating Temperature 0 to 70 C (32 to 158 F)
Package Type Bulk
View Details
3 suppliers
Flash Memory - 1882828P - RS Components, Ltd.
RS Components, Ltd.
Flash Memory
1882828P
Specs
Memory Category Flash
Density 64000 kbits
Package Type USON
View Details