Huayi Microelectronics Co., Ltd. Transistors HYG350P13NA1B

Description
TO-263-2 MOSFETs ROHS
  • Transistors - HYG350P13NA1B - ODG (Origin Data Global)
    ODG (Origin Data Global)
Description
TO-263-2 MOSFETs ROHS

Suppliers

Company
Product
Description
Supplier Links
Transistors - HYG350P13NA1B - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
HYG350P13NA1B
Transistors HYG350P13NA1B
TO-263-2 MOSFETs ROHS

TO-263-2 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number HYG350P13NA1B
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

IGBT - 20563721 - Radwell International
Fuji Electric Corp. of America
IGBT
7MBR75SB060
Specs
Transistor Type IGBT
View Details
TRANSISTORS - Transistors (BJT) - Single - 2SA1540E - 855043-2SA1540E - Win Source Electronics
Rochester Electronics
TRANSISTORS - Transistors (BJT) - Single - 2SA1540E
2SA1540E
Specs
Package Type SOT3
View Details
Current Collector high-performance aviation current collector DHK160-3-90A for an aerospace - - JiuJiang Ingiant Technology Co., Ltd.
JiuJiang Ingiant Technology Co., Ltd.
Current Collector high-performance aviation current collector DHK160-3-90A for an aerospace
View Details
DC - 25 GHz, 7 Watt, 28 V GaN RF Transistor - TGF2933 - Qorvo
Qorvo
DC - 25 GHz, 7 Watt, 28 V GaN RF Transistor
TGF2933
Specs
Transistor Technology / Material GaN
Package Type die
View Details
2 suppliers